BUL128D-B Allicdata Electronics
Allicdata Part #:

497-12755-5-ND

Manufacturer Part#:

BUL128D-B

Price: $ 0.41
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: TRANS NPN 400V 4A TO-220
More Detail: Bipolar (BJT) Transistor NPN 400V 4A 70W Through ...
DataSheet: BUL128D-B datasheetBUL128D-B Datasheet/PDF
Quantity: 1
1 +: $ 0.37800
50 +: $ 0.31374
100 +: $ 0.25603
500 +: $ 0.20242
1000 +: $ 0.16194
Stock 1Can Ship Immediately
$ 0.41
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1A, 4A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 2A, 5V
Power - Max: 70W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Base Part Number: BUL128
Description

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Transistors are an integral component of electronic circuits, and have been widely used in the field of communications, computers, automobiles, and consumer electronics. The BUL128D-B is a bipolar type single transistor commonly employed in various modern electronics. This particular transistor is designed to be used in a broad range of applications, and displays superior portable performance as compared to traditional transistors.

The BUL128D-B is a NPN-type bipolar junction transistor (BJT) consisting of three layers. This type of transistor is especially useful for amplifier, oscillator, and switching circuits. BUL128D-B is a specific type of bipolar NPN transistor, specifically designed for good low frequency performance even at low collector currents. It is widely used for switching related purpose, like in various control and communication systems.

The working principle of BUL128D-B is based on the fact that it contains three semiconductor layers, namely the base, collector and emitter, each layer being connected to a distinct point and acting as an insulator. When a circuit is closed, electrons move from the upper part of the collector to the lower part of the emitter via the base to form a current. This current, once formed, can be controlled by varying the voltage applied to the base.

The collector of BUL128D-B is the part of the transistor where the voltage is applied in order to achieve specific results. It can either be forward or reverse biased, depending on the type of application. The base is the middle part of the transistor and is the point responsible for controlling the collector current by applying the voltage to the correct point. The emitter forms an electrical connection between the collector and base and supplies the electrons responsible for forming the current.

In terms of application field, the BUL128D-B can be used in an extensive range of circuits, from simple amplifier circuits to RF amplifiers, switching systems, and oscillators. As a single transistor, it is often used as an active component in combination with other technologies like IC’s, transistors, and FET’s. The superior low frequency performance and low voltage requirements are also highlights of the BUL128D-B.

The BUL128D-B is an advantageous component in many electronic circuits, due to its compact size, superior portability, and superior performance. It is a viable choice in many different application fields, performed extremely well in a diverse range of circuits. The component\'s three distinct layers are separately connected to the base, collector, and emitter, allowing a current to flow in order for the particular circuitry to function. This component also offers flexibility as it can be employed in both forward- and reverse-biased circuits.

In summary, the BUL128D-B is a commonly used single bipolar junction transistor (BJT) component widely employed in a broad range of circuits such as those used in communications and control systems. The component consists of the base, collector, and emitter, which are all separated by a thin insulator and form a three-layer structure. This structure makes it possible for a current to form in order for the component to function as desired. Due to its superior performance, small size, and portability, the BUL128D-B is a frequent choice for many different types of applications.

The specific data is subject to PDF, and the above content is for reference

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