BUL1203EFP

Series:	--
Packaging:	Tube
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	5A
Voltage - Collector Emitter Breakdown (Max):	550V
Vce Saturation (Max) @ Ib, Ic:	1.5V @ 1A, 3A
Current - Collector Cutoff (Max):	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	9 @ 2A, 5V
Power - Max:	36W
Frequency - Transition:	--
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220-3

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Introduction

The BUL1203EFP is a NPN silicon-based transistor that is best suited for general purpose switching and amplifier applications. It is a single bipolar transistor, or BJT, and it has a higher Collector-Emitter Voltage than other BJTs. It is often used in gate circuits, high efficiency amplifier, and variable gain amplifier designs.

Features

The BUL1203EFP has a wide range of features that make it an ideal choice for many applications. These include:• Low noise• High switching speed• Low voltage handling capabilities up to 50V• low collector-emitter saturation voltageThese features make it well suited for many types of applications, such as lighting, instrumentation, motor control, and audio amplifiers.

Application Fields

The BUL1203EFP has a wide range of potential applications. It is well suited for applications that require high switching speeds and low noise, such as those found in the fields of lighting, instrumentation, motor control, and audio amplifiers.It is also often used in gate circuits, as it can handle high voltages while still providing low noise. This makes it ideal for driving high-power components such as LEDs, electric motors, or audio amplifiers.The variable gain amplifier is another application that the BUL1203EFP is well suited for. It has a low collector-emitter saturation voltage, which allows it to provide a variable gain without a large increase in power consumption.

Working Principle

The BUL1203EFP works on the principle of a bipolar junction transistor (BJT). This device is composed of three main parts: the collector, the base, and the emitter. The collector and emitter are connected to the power supply, and the base voltage governs the operation of the transistor. When the base voltage is low, the transistor is in a cut-off state, no current flows between the two points, and the device acts as an open switch. When the base voltage is increased, the transistor enters the saturation state, and current begins to flow.The collector-emitter saturation voltage of this device is important, as it determines the gain of the device in switch mode. The lower the collector-emitter voltage, the higher the gain. The BUL1203EFP has a low collector-emitter saturation voltage, which makes it ideal for amplifying and switching signal.

Conclusion

The BUL1203EFP is a NPN silicon-based transistor best suited for general purpose switching and amplifier applications. It is a single bipolar transistor and has a higher Collector-Emitter Voltage than many other BJTs, making it perfect for gate circuits, high efficiency amplifier, and variable gain amplifier designs. The low noise and high switching speed makes it ideal for lighting, instrumentation, motor control, and audio amplifier applications. The BUL1203EFP works on the principle of a bipolar junction transistor, in which the collector and emitter are connected to the power supply, and the base voltage governs the operation of the transistor. The low collector-emitter saturation voltage is what makes this device ideal for switch and amplifier applications, as it provides a high gain and low power consumption.

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