BUZ10

The BUZ10 application field and working principle can be attributed to the category of Transistors - FETs (Field-Effect Transistors), MOSFETs (Metal-Oxide Semiconductor Field-Effect Transistors) and Single transistors. In this article, we will explore the BUZ10 transistor, its applications and its working principle.

A BUZ10 transistor is an enhancement-type Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) characterized by its low gate-to-drain capacitance and low on-resistance (RDS(ON)), which make it suitable for applications such as high-speed, high-frequency switching, motor control, and intelligent power management. In addition, the BUZ10 offers highest transient side-channel immunity and excellent latch-up performance. These features make the BUZ10 an ideal choice for power control circuits, such as high-end motor controllers, regulators and DC-to-DC converters.

The BUZ10 transistor is a three-port device consisting of a source, a drain and a gate. The source is an N-type region connected to the negative terminal of the battery, while the drain is an N-type region connected to the positive terminal. The gate is the control electrode and is used to control the flow of current through the device. The source and the drain can be either connected together (in the “off” state) or separated (when the transistor is turned “on”). When the gate is connected to the source, the device is turned “on”.

The BUZ10 is typically used in applications where it needs to switch very high-frequency signals. This is because it has low gate-to-drain capacitance and low power consumption. Due to its low capacitance, the BUZ10 is able to switch very high-frequency signals without any significant losses. Furthermore, the low on-resistance (RDS(ON)) allows for high switching frequency and high power delivery.

The BUZ10 also offers excellent thermal performance and is able to operate at low temperatures. This is because it is designed to be very efficient and not dissipate any extra heat. TheBUZ10 can be used in both analog and digital circuits and is suitable for applications such as intelligent power management, motor controllers and DC-to-DC converters.

The working principle of the BUZ10 is based on the electrostatic attraction of charges. When the gate is connected to the source, it causes a voltage to be applied to the gate, which produces a current between the gate and the drain. This current causes a voltage drop between the source and drain, allowing current to flow from the source to the drain.

The BUZ10 is an efficient and reliable device, offering high-speed switching, low gate capacitance, low power consumption and high transient side-channel immunity. It is also highly suitable for applications such as power control circuits, motor controllers and DC-to-DC converters.

BUZ10	STMicroelect...	0.0 $	1000	MOSFET N-CH 50V 23A TO-22...
BUZ11_R4941	ON Semicondu...	0.0 $	1000	MOSFET N-CH 50V 30A TO-22...
BUZ11-NR4941	ON Semicondu...	--	581	MOSFET N-CH 50V 30A TO-22...