BUZ11-NR4941

Series:	--
Packaging:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	50V
Current - Continuous Drain (Id) @ 25°C:	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	40 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:	4V @ 1mA
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	2000pF @ 25V
FET Feature:	--
Power Dissipation (Max):	75W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220-3
Package / Case:	TO-220-3

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The BUZ11-NR4941 transistor is a component that is commonly used for applications and electronic circuits. It belongs to the single FETs (field effect transistors) family.The BUZ11-NR4941 transistor comes from the silicon Carbide technology, enabling very low on-resistance and momentary current carrying capability values. It is a 600 V/ 0.7 Ohm N-channel MOSFET (metal oxide semiconductor field effect transistor) ideal for applications with moderate temperature. It is an improved version of the BUZ11-NR4941 transistor due to its enhanced thermal design.This specific type of transistor is mainly used in applications such as LED lighting, motor control, switch-mode power supplies and converters, and high power amplifiers. It is very small in size, so it fits in most small surface space areas. Its use varies depending on the application; it is used in different circuits as a regulator, a switch, a buffer, an amplifier or other similar applications.To understand the working principle of the BUZ11-NR4941 transistor, it is useful to understand the basics of Transistor operation. A transistor is a semiconductor device used for electronic switches, amplifiers and modulators. In the case of the BUZ11-NR4941, it is an N-channel type of MOSFET.There are two terminals: the gate and drain. The gate terminal is a control electrode which controls the current flow between the source and the drain. When a small voltage is applied to the gate, the conductive channel between source and drain increases allowing more current to flow. This can be used to control the amount of current flowing through the transistor.When a voltage is applied to the gate terminal, the positive charge or Electron Carriers called “holes” (positive charge carriers) will form a conductive region between the source and the drain. This is called the “channel”.Due to the N-channel MOSFET structure, the negative charge or Electron Carriers called Electrons (negative charge carriers) are attracted to the “channel” when the gate voltage is positive. This increases the flow of current between the source and drain, allowing more current to flow through the transistor.The BUZ11-NR4941 transistor also features a high frequency and high-speed switching capability. This enables it to be used for various applications, including low power switching of LED lighting, motor control, and high frequency amplifiers.In conclusion, the BUZ11-NR4941 transistor is a single FET with low on resistance and momentary current carrying capability. It is mainly used for applications in LED lighting, motor control, switch-mode power supplies, converters and high power amplifiers. The BUZ11-NR4941 transistor uses the N-channel MOSFET structure to control the current flow in an intelligent way, enabling very low power loss and high frequency and high-speed switching.

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