BUZ11_R4941 Allicdata Electronics
Allicdata Part #:

BUZ11_R4941-ND

Manufacturer Part#:

BUZ11_R4941

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 50V 30A TO-220AB
More Detail: N-Channel 50V 30A (Tc) 75W (Tc) Through Hole TO-22...
DataSheet: BUZ11_R4941 datasheetBUZ11_R4941 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 40 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
FET Feature: --
Power Dissipation (Max): 75W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

When engineers are designing devices or components that require power and fast switching times, they often choose MOSFETs as their go-to components. The BUZ11-R4941 MOSFET is a type of field-effect transistor (FET) that is widely used in applications such as motor control, level shifting, frequency conversion, and high-speed power switching. In this article, we’ll discuss the application field and working principle of the BUZ11-R4941.

The BUZ11-R4941 MOSFET belongs to a subset of FETs known as metal-oxide-semiconductor FETs. As its name implies, MOSFETs have a layer of metal oxide at the surface of a semiconductor material. This layer of metal oxide acts as an insulator and prevents current flow between the drain and gate terminals.

This type of gate-controlled transistor has the ability to control high current levels. It can also operate at higher frequencies than other types of FETs due to its lower input capacitance. Additionally, the BUZ11-R4941 can provide fast switching times, low on-state resistance, and higher breakdown voltage than other MOSFETs.

In terms of its application field, the BUZ11-R4941 is widely used in switching power supplies, DC-DC converters, and motor controllers. It is also widely used in battery chargers, smart phone charging circuits, and switching batteries. Additionally, its low on-state resistance makes it ideal for high-speed power applications.

Let’s now take a look at the working principle of the BUZ11-R4941. As mentioned previously, this MOSFET is a gate-controlled transistor that is composed of a metal-oxide layer that acts as an insulator. When the gate terminal is connected to a voltage, the metal-oxide layer becomes conductive, allowing current to flow between the drain and source terminals.

The BUZ11-R4941 has a maximum continuous drain-source voltage of 55V and a maximum pulse drain-source voltage of 70V. Additionally, its maximum drain current rating is 6A at 25°C. It also features a 45°C temperature coefficient for its gate threshold voltage and a 2.4V maximum gate-source voltage rating.

The BUZ11-R4941 has a low on-state resistance of about 0.014 ohms and a low gate threshold voltage of 1.2V. This allows it to achieve fast switching times and minimal power loss. Furthermore, the BUZ11-R4941 features a high breakdown voltage rating of 85V, which enables it to handle higher voltages than other MOSFETs.

In summary, the BUZ11-R4941 MOSFET is a type of field-effect transistor that is widely used in motor control, level shifting, frequency conversion, and high-speed power switching applications. It has a low on-state resistance and high breakdown voltage, allowing it to handle higher current levels and higher voltages than other MOSFETs. It also features a low gate-source voltage rating and fast switching times.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "BUZ1" Included word is 3
Part Number Manufacturer Price Quantity Description
BUZ10 STMicroelect... 0.0 $ 1000 MOSFET N-CH 50V 23A TO-22...
BUZ11_R4941 ON Semicondu... 0.0 $ 1000 MOSFET N-CH 50V 30A TO-22...
BUZ11-NR4941 ON Semicondu... -- 581 MOSFET N-CH 50V 30A TO-22...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics