BVSS123LT1G Discrete Semiconductor Products

BVSS123LT1G is a high-voltage depletion mode logic N-Channel MOSFET that is designed for high-voltage switching and power control applications. It is capable of operating at a supply voltage of up to -60 V. Its low input capacitance makes it suitable for high-frequency application. With a typical drain-source breakdown voltage of -1000 V, it is well-suited for high-voltage power circuits.The BVSS123LT1G is a single silicon N-Channel MOSFET. It is manufactured with a standard CMOS technology process and is encapsulated in an industry standard 3-Lead TO-247 package. The N-Channel MOSFET consists of three terminals: the source (S), the drain (D) and the gate (G). The source and drain are connected to the drain and source of the power supply respectively, while the gate is connected to the switching voltage.The BVSS123LT1G is a voltage-controlled device, which means that it is used to provide a controllable flow of current through a given load circuit. When the gate voltage of the device is high, the device is in the “on” or “conducting” state and current flows between source and drain. When the gate voltage is low, the MOSFET is in the “off” or “non-conducting” state, and no current flows between source and drain.The BVSS123LT1G is well-suited for power control and switching applications, in particular those involving high-voltages. It can be used to control the voltage in power supply circuits, as well as to switch on and off external relays or DC motors. It is also suitable for the protection of circuits in the event of a high-voltage surge.The BVSS123LT1G can be used to switch both AC and DC systems. It can operate effectively with either a PWM (pulse width modulation) or PFC (phase control) switching system. Its low input capacitance and low input/output capacitive coupling make it suitable for high-frequency applications. It also has a low leakage current when in its off state, making it ideal for high-voltage power control.In addition to its use for high-voltage switching and power supply control, the BVSS123LT1G is widely used for transistor-level logic devices. Its high transconductance, low on-resistance and low driving power, make it unique for applications requiring strong switching even at low gate voltages. It is also used in low-power analog switches, such as those in pH probes, electrochemical sensors and optical-measuring systems.The BVSS123LT1G has a wide variety of applications, ranging from switching and power control to logic-level control. Its ability to operate at high voltages and high-frequencies make it suitable for a variety of applications. It is also a reliable and cost-effective device that can provide a dependable solution for a variety of high-voltage, low-power and high-frequency applications.

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