BVSS84LT1G Allicdata Electronics

BVSS84LT1G Discrete Semiconductor Products

Allicdata Part #:

BVSS84LT1GOSTR-ND

Manufacturer Part#:

BVSS84LT1G

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 50V 130MA SOT-23-3
More Detail: P-Channel 50V 130mA (Ta) 225mW (Ta) Surface Mount ...
DataSheet: BVSS84LT1G datasheetBVSS84LT1G Datasheet/PDF
Quantity: 1000
3000 +: $ 0.05072
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 225mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 5V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 10 Ohm @ 100mA, 5V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Drain to Source Voltage (Vdss): 50V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The BVSS84LT1G Transistor is an important component in many different applications. It is a single MOSFET (Metal Oxide Semiconductor Field Effect Transistor), and it can be used for a variety of purposes. This article will discuss the application fields and the working principle of the BVSS84LT1G

The BVSS84LT1G is a discrete MOSFET with an N-channel polarity. It is designed with a small form factor of 4.1 mm as defined by its TO-252 density, making it well-suited for use in space-constrained designs. Being a single transistor, the BVSS84LT1G can be used as a basic switch where limited current and voltage are required.

The application field of the BVSS84LT1G is incredibly versatile and can be used in numerous applications. It can be used to switch loads from DC power sources in consumer electronics and automotive components such as relays and contactors. It can also be applied as small signal switching for logic circuits, radio frequency amplifiers, analog signal switching, and high speed systems. The BVSS84LT1G is a powerful component which can be used in a variety of applications.

To understand the working principle of the BVSS84LT1G, it’s important to first understand the structure and operation of a MOSFET. A MOSFET is a three terminal field effect transistor with an insulated gate. This gate is responsible for controlling the current flow of the device, as an electrical charge or voltage is applied to the gate, it can either allow or prevent current flow in the MOSFET. This is known as the principle of field effect.

For the BVSS84LT1G MOSFET, the two terminals are connected to the source and drain and the third terminal is connected to the gate. An application of a voltage across the gate and drain causes electrons to be accumulated on the surface of the gate oxide layer. This creates an electron channel of current flow from the source to the drain when the gate electrode voltage is at the threshold voltage level. The higher the voltage, the wider the current channel and more current can flow from source to drain.

In summary, the BVSS84LT1G is a powerful single MOSFET which can be used in a variety of applications. It is mainly used to switch loads from DC power sources such as in consumer electronics and automotive components. Its operation is based on the principle of field effect, where an electrical charge or voltage is applied to the gate to either allow or prevent current flow in the MOSFET. It is a powerful component which provides an essential service in many types of applications.

The specific data is subject to PDF, and the above content is for reference

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