BVSS138LT1G Discrete Semiconductor Products |
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Allicdata Part #: | BVSS138LT1GOSTR-ND |
Manufacturer Part#: |
BVSS138LT1G |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 50V 200MA SOT-23-3 |
More Detail: | N-Channel 50V 200mA (Ta) 225mW (Ta) Surface Mount ... |
DataSheet: | BVSS138LT1G Datasheet/PDF |
Quantity: | 36000 |
3000 +: | $ 0.04399 |
Vgs(th) (Max) @ Id: | 1.5V @ 1mA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 225mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 25V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3.5 Ohm @ 200mA, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 200mA (Ta) |
Drain to Source Voltage (Vdss): | 50V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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BVSS138LT1G is a single n-channel low-side MOSFET. It is a high speed small package device that is perfect for switching high frequency and high current applications in both low and high voltage applications. The device has a low on-state resistance and a low gate drive current to reduce switching losses. It can operate from 0V to 600V and up to a total power dissipation of 75W.
The BVSS138LT1G is ideal for high speed power converters, power-management circuit designs, and motor-drive applications. It is used in digital and analog circuits, Switched Mode Power Supplies (SMPS), PWM Controllers and DC-DC converters. It can also be used in amplifier circuits and in automated control systems.
The BVSS138LT1G is an N-channel, depletion-mode MOSFET. This type of transistor is a four-terminal device that functions as a low-side switch. When in a circuit, the left lead is the gate or input lead, while the right lead is the drain or output lead. The two remaining leads are the source and the body. When the input voltage reaches a particular level, the transistor switches “on” and conducts current between the drain and the source.
The BVSS138LT1G is designed to be used with a gate drive voltage of between 0V and 5V. When the gate drive voltage is higher than the gate threshold voltage, the transistor will start to conduct current from source to drain. The voltage across the source and the drain of the device is called the drain-source voltage, and is typically used as the switching element for the power control portion of an circuit design. The on-state resistance is the resistance between source and drain when the device is in its “on” state.
The BVSS138LT1G is capable of withstanding voltage spikes in the circuit and the device has the ability to dissipate up to 75W of power. The device is protected against electrical over-stress and can operate in temperatures up to 150 degrees Celsius. It is also RoHS compliant and can be used in a wide range of applications.
In conclusion, the BVSS138LT1G is an ideal choice for a wide range of high frequency, high current and low voltage applications, such as power converters, power management circuits and motor drives. It is designed to function as a low side switch, with a gate drive voltage of between 0V and 5V required to switch “on” the device. It has an on-state resistance and can handle up to 75W of power. The device is also protected against over-stress, is RoHS compliant and can operate in temperatures up to 150 degrees Celsius.
The specific data is subject to PDF, and the above content is for reference
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