CMLDM3737 TR

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

CMLDM3737 TR is a feature-rich transistor array that is designed for an array of applications. This transistor array is designed to provide high levels of functionality and reliability. The CMLDM3737 TR is a 3-terminal array consisting of two N-channel MOSFETs in parallel and two P-channel MOSFETs in parallel. It has a wide range of operating conditions, making it suitable for a variety of applications. The CMLDM3737 TR has a unique pinout configuration, which allows for easy connection and flexibility. It has a high breakdown voltage of around 300V, making it suitable for use in high-voltage applications.

The CMLDM3737 TR is ideal for use as a level shifter, power switch, voltage regulator, and many more applications. It is also suited for use in automotive, industrial, and communications applications. The CMLDM3737 TR is designed to be a robust device, with a temperature range of -25°C to 125°C and a maximum junction temperature of 150°C. It is designed to withstand various environmental conditions, and has a thermo-molecular lifetime of 1000 hours.

The working principle of the CMLDM3737 TR is based on the basic structure of a MOSFET and its characteristics. The MOSFET is a three-terminal device, consisting of a source, gate, and drain. The source and drain are connected to an external power supply, while the gate is connected to a control signal from the application circuit. When the application circuit sends a positive voltage to the gate, the FET turns on, allowing current to flow from the source to the drain. When the voltage applied at the gate is below the threshold voltage of the FET, the FET turns off and no current flows. The threshold voltage for the CMLDM3737 TR is around 4.5V.

The CMLDM3737 TR is a versatile device that is well suited for use in a wide variety of applications. It has a high breakdown voltage, making it suitable for use in high-voltage applications. The MOSFET structure of the CMLDM3737 TR provides good power efficiency and high switching speeds. The device is designed to meet various environmental conditions, making it suitable for use in automotive, industrial, and communications applications. The high performance and robust design of this device make it an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference