CMLDM8120G TR Discrete Semiconductor Products |
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Allicdata Part #: | CMLDM8120GTR-ND |
Manufacturer Part#: |
CMLDM8120G TR |
Price: | $ 0.21 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | MOSFET P-CH 20V 0.86A SOT563 |
More Detail: | P-Channel 20V 860mA (Ta) 350mW (Ta) Surface Mount ... |
DataSheet: | CMLDM8120G TR Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.18605 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 860mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 150 mOhm @ 950mA, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 3.56nC @ 4.5V |
Vgs (Max): | 8V |
Input Capacitance (Ciss) (Max) @ Vds: | 200pF @ 16V |
FET Feature: | -- |
Power Dissipation (Max): | 350mW (Ta) |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-563 |
Package / Case: | SOT-563, SOT-666 |
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The CMLDM8120G TR transistor is a high-performance MOSFET transistor, which is used in a variety of applications. It is designed to provide superior performance and reliability while delivering high power and low switch times.
The CMLDM8120G TR is a single MOSFET transistor which features a SiGe N-channel depletion-mode FET with a dielectric isolation. It is manufactured with the latest advanced process technology to ensure the highest performance and reliability. It has excellent RDS(ON) characteristics and is able to switch at very low threshold voltages.
The CMLDM8120G TR is widely used in a variety of applications including high frequency switching regulators, DC/DC converter, power management, and high current load switching applications. This transistor is especially suited for handheld applications as it offers superior performance in portable and battery operated environments. It can also be used in other fields such as automotive systems, automotive infotainment, industrial control and LED drivers.
The working principle of the CMLDM8120G TR can be explained as follows. When the gate voltage is applied, a channel is formed between the source and drain terminals. The N channel of the transistor acts as an electron kinetic barrier, allowing only electrons with enough energy to pass through it. This band gap is referred to as the threshold voltage. Electrons below this threshold voltage are blocked by the N channel barrier and hence do not move through the channel. This process is known as depletion. When the gate voltage is increased, the current flow increases and hence the device can be switched on and off quickly.
The CMLDM8120G TR has a wide range of uses and applications, making it an important tool for many industrial and consumer applications. Its low switch times and high efficiency make it an ideal choice for portable and battery operated applications, as well as applications with strict energy guidelines. With its superior RDS(ON) characteristics, the CMLDM8120G TR provides a reliable, efficient and cost effective solution for any application requiring a high power, low switch time MOSFET transistor.
The specific data is subject to PDF, and the above content is for reference
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