CMLDM7003G TR Discrete Semiconductor Products

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The CMLDM7003G TR from Cree is an advanced power MOSFET array device that combines two N-channel enhancement mode MOSFETs (Metal-Oxide Semiconductor Field-Effect Transistors) in one package. The MOSFETs in this device share a common gate and the total device has a single drain connection. This device is suitable for use in high-power switching and other applications.

The CMLDM7003G TR application field includes power switch circuits, DC-DC converters, and synchronous rectifiers. It features a low on-resistance and is optimized for both low on-resistance and high-current switching performance. In addition, it has a low gate charge, a low threshold voltage, and a high-frequency operation.

In terms of working principle, the CMLDM7003G TR operates as an enhancement-mode MOSFET; meaning the conduction channel is created when a voltage is applied to the gate. This voltage causes the channel between the source and drain to open, allowing current to flow from the source to the drain. The resistance of the channel depends on the gate voltage: the greater the gate voltage, the smaller the channel, and the lower the resistance.

The combination of enhancement mode transistors with the low on-resistance and high-frequency switching properties of the CMLDM7003G TR makes it highly suitable for use in advanced power switch circuits, DC-DC converters, synchronous rectifiers, and other advanced power applications. In addition, this device can provide a high current carrying capacity and low total switch resistance at the same time. In terms of protection, the MOSFET is also designed to provide ESD protection up to ±15kV to protect the circuit operation.

In summary, the CMLDM7003G TR is a high-performance MOSFET array device that combines two N-channel enhancement mode transistors in one package. It is suitable for use in high-power switching applications, DC-DC converters, synchronous rectifiers, and other advanced power applications due to its low on-resistance, low gate charge, low threshold voltage, and high-frequency operation. The device also provides ESD protection up to ±15kV so it can be used in a wide range of environments.

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