CMLDM7002AJ TR Allicdata Electronics

CMLDM7002AJ TR Discrete Semiconductor Products

Allicdata Part #:

CMLDM7002AJTR-ND

Manufacturer Part#:

CMLDM7002AJ TR

Price: $ 0.28
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: MOSFET 2N-CH 60V 0.28A SOT563
More Detail: Mosfet Array 2 N-Channel (Dual) 60V 280mA 350mW Su...
DataSheet: CMLDM7002AJ TR datasheetCMLDM7002AJ TR Datasheet/PDF
Quantity: 1000
3000 +: $ 0.25358
Stock 1000Can Ship Immediately
$ 0.28
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 280mA
Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.59nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 350mW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563
Description

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The CMLDM7002AJ TR has important applications in a variety of settings, from controlling current flow in electrical components to providing signal amplification in audio and video systems. This field-effect transistor (FET) offers more configuration options than the traditional transistor, the bipolar type, and is often the preferred choice for applications where controlling the amount of current flow and how signal waves are transmitted are of prime importance. The CMLDM7002AJ TR features a two-channel, two-array design with dual FETs in each channel. Understanding the purpose and design of the CMLDM7002AJ TR is key to taking full advantage of its capabilities.

The CMLDM7002AJ TR is a field-effect transistor array featuring two FETs in each channel, with each channel having separate gate and drain terminals. The FETs in each channel can alternatively be connected in either the parallel or the series configuration. When connected in parallel, each FET has its own gate voltage which gives the transistor a high input impedance, meaning that the FET draws only very little current from the gate. This configuration also allows the CMLDM7002AJ TR to be used as an amplifier. When connected in series, each FET has both its gate and drain terminals tied together, which allows the FET to function as a switch, allowing and blocking current flow in one direction.

The CMLDM7002AJ TR also has a unique gate-to-drain capacitance, which makes it ideal for high-frequency applications. This gate-to-drain capacitance characteristic allows the transistor to provide excellent signal transient and higher switching speed, while also reducing the amount of total power required to switch the FETs from an off state to an on state. This makes the CMLDM7002AJ TR a highly efficient FET for both switching and amplifying signals in applications such as audio, video and medical instrumentation.

The working principle of the CMLDM7002AJ TR is fairly simple. When voltage is applied to the gate, a charge is induced which forms an electric field between the gate and the drain. This induces a flow of electrons from the source of the transistor to the drain, which can then be regulated using the gate voltage. By adjusting the voltage, the current through the transistor monotonically increases or decreases, allowing the transistor to act as either an amplifier or a switch. As the FETs are connected in pairs, this makes it possible to control multiple transistors with one voltage signal.

The CMLDM7002AJ TR is a highly versatile FET with a plethora of potential uses. It is particularly suitable for applications where high-frequency switching and signal amplification are of primary importance. With its dual-channel design and configurable FET pairs, the CMLDM7002AJ TR allows for extraordinary flexibility in terms of both modulation and power control. As a result, this FET can be used for a wide range of purposes, from powering high-end electronics and controlling motor speed to amplifying audio signals. By leveraging this FET\'s features, applications of all kinds can be designed in a robust and efficient way.

The specific data is subject to PDF, and the above content is for reference

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