CMLDM3757 TR Discrete Semiconductor Products |
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Allicdata Part #: | CMLDM3757TR-ND |
Manufacturer Part#: |
CMLDM3757 TR |
Price: | $ 0.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | MOSFET N/P-CH 20V SOT563 |
More Detail: | Mosfet Array N and P-Channel 20V 540mA, 430mA 350m... |
DataSheet: | CMLDM3757 TR Datasheet/PDF |
Quantity: | 6000 |
3000 +: | $ 0.13476 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 540mA, 430mA |
Rds On (Max) @ Id, Vgs: | 550 mOhm @ 540mA, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 1.58nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 150pF @ 16V |
Power - Max: | 350mW |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SOT-563 |
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Overview
CMLDM3757TR is a type of transistor array that offers superior performance in extreme environments due to its dielectric strength and solderability. This article will discuss the application fields and working principles of CMLDM3757TR along with its advantages.
Application Fields
CMLDM3757TR application fields include the automotive, industrial, and communications industries. Low voltage power supplies in the automotive industry benefit greatly from the use of this array as its robust performance will enable the use of transistors in harsh temperature and humidity environments. CMLDM3757TR also is used in industrial fields in order to support activities such as controlling valves in hydraulic systems as well as operation under high pressures. In the communications industry, CMLDM3757TR is used in multiple applications such as routers, switches, and other network components that require enhanced performance and reliability in their operation.
Working Principle
CMLDM3757TR array is designed for improvement of semiconductor performance in extreme environmental conditions. It is a N-type Field-Effect Transistor (NFET) array composed of two cascaded N-type transistors (NFETs). The two cascaded transistors provide excellent channel characterizes in extreme environmental conditions, giving the device improved performance in terms of date transfer speeds, power consumption, and noise immunity. The array also provides excellent solderability due to its dielectric strength, allowing it to be soldered onto even the most difficult materials. Additionally, the short gate-drain distance allows the NFETs to be operated at low voltages in comparison to traditional NFETs of the same type.
Advantages
CMLDM3757TR arrays offer various advantages over other types of transistors. First, they have an improved threshold and breakdown voltage in extreme environmental conditions. This allows the transistor to withstand higher operating voltages, making it suitable for use in harsh environments, such as the automotive industry. Furthermore, the array’s improved reliability makes it more suitable for operation in those same kinds of environments. Finally, the high speed of data transmission, low power consumption, and noise immunity of the array makes it a practical choice for a wide range of applications such as communications and industrial applications.
Conclusion
CMLDM3757TR transistors array is an ideal choice for applications that need performance and reliability in extreme environments. With its improved threshold and breakdown voltage as well as improved reliability, dielectric strength, and noise immunity, it is a practical choice for applications ranging from automotive and industrial to communication. Its short gate-drain distance also allows it to be operated at low voltages, making it a very versatile transistor array.
The specific data is subject to PDF, and the above content is for reference
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