Allicdata Part #: | CTLDM303N-M832DSBK-ND |
Manufacturer Part#: |
CTLDM303N-M832DS BK |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | MOSFET DUAL N-CHANNEL |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 3.6A (Ta) 1.65... |
DataSheet: | CTLDM303N-M832DS BK Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Last Time Buy |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 3.6A (Ta) |
Rds On (Max) @ Id, Vgs: | 40 mOhm @ 1.8A, 4.5V |
Vgs(th) (Max) @ Id: | 1.25V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 590pF @ 10V |
Power - Max: | 1.65W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TDFN Exposed Pad |
Supplier Device Package: | TLM832DS |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The CTLDM303N-M832DS BK belongs to the Transistors - FETs, MOSFETs - Arrays family of electronics. Specifically, this is a three channel logic circuit that contains both N-channel and P-channel power MOSFETs (field-effect transistors). It has a wide range of applications, including motor control, power switching and protection, driving lights and signals, and providing protection against power spikes or energy surges. It is also commonly used in data acquisition and conversion applications.
The device has a total of 31 pins, with three individual source pins and three individual drain pins, one gate each. It has an on-resistance of 3.2 Ω (ohm) maximum and its gate-source voltage is -3.5 to +12 V. The package includes three power supply pins - VDRAIN, VDS, and VGS - and a gate control pin. The chip has a current capability of 0.1 to 2.4A, a power dissipation of 362 mW at 25°C, and a maximum junction temperature of 175°C.
When it comes to operating the chip, a number of working principles come into play. Firstly, the device has two separate operation modes, either an enhancement mode or a depletion mode. In enhancement mode, the device is enabled by a positive electric field at the gate, which drives one type of electric carriers (either electrons or holes) to the semiconductor’s surface. As a result, the current passing through the device increases as the voltage applied to the gate increases. On the other hand, in depletion mode, the flow of electric current through the device is reversed, as a negative electric field is applied at the gate. In addition, the device can be operated in either of the two modes using a combination of both drain-source and gate voltages.
Moreover, the chip also has an effective on-state resistance and a body-diode forward voltage drop, depending on the junction temperature. Its forward body diode drop is approximately 650 mV and its typical on-state resistance is 2.3 Ω. In addition, it also has the ability to handle large power surge up to eight times its rated current and offers good output voltage switching performance.
In conclusion, the CTLDM303N-M832DS BK belongs to the Transistors - FETs, MOSFETs - Arrays family of electronics and is used for a wide range of applications. It has a total of 31 pins and a current capability of 0.1 to 2.4A. It has two separate operation modes - either an enhancement mode or a depletion mode and works based on the principles of electric fields. Finally, it has an effective on-state resistance and a body-diode forward voltage drop and can handle large power surge up to eight times its rated current.
The specific data is subject to PDF, and the above content is for reference
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