Allicdata Part #: | CTLDM8120-M832DSBK-ND |
Manufacturer Part#: |
CTLDM8120-M832DS BK |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | MOSFET DUAL N-CHANNEL |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 860mA (Ta) 1.6... |
DataSheet: | CTLDM8120-M832DS BK Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Last Time Buy |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 860mA (Ta) |
Rds On (Max) @ Id, Vgs: | 150 mOhm @ 950mA, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 3.56nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 200pF @ 16V |
Power - Max: | 1.65W |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TDFN Exposed Pad |
Supplier Device Package: | TLM832DS |
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The CTLDM8120-M832DS BK is a FET array, also known as FET array, which stands for Field Effect Transistor array. It is a type of transistor that uses a field effect to control current and voltage. The field effect is a voltage or electric field that is applied to an electrical channel, which causes a change in the resistance of the channel. This change can be used to control or regulate the current or voltage of a circuit. The FET array consists of a number of transistors that are connected in series, usually with a common ground or source of power. These transistors can be used in various applications, such as voltage or current regulation, switching, or amplification.
The CTLDM8120-M832DS BK is typically used for high-power applications and is effective in high-voltage (over 100V) and low-current circuits. It is mainly used for controlling DC-to-DC and AC-to-DC power converters and can be used in applications such as motor control, power supply and lighting controls, power conversion, and power monitoring. Its power rating is 5 Amps and its drain-source voltage is 30V. It is extremely efficient and can handle substantial amounts of current without creating large amounts of heat.
The working principle of the CTLDM8120-M832DS BK is the same as that of normal FETs or Field effect transistors. A voltage or electric field is applied over the Gate side of the transistor, which creates a region of depleted charge carriers, known as a channel. This, in turn, causes the resistance of the channel to increase, thus controlling the current. The current flowing through the Drain and Source of the transistor can be regulated by changing the voltage applied to the Gate.
The CTLDM8120-M832DS BK provides a high level of reliability and is available in different packaging options. It is easy to install and maintain and is relatively inexpensive. The device is well-suited for applications requiring high current capability, high voltage ratings and high switching speeds. Furthermore, it is suitable for a wide range of applications due to its high efficiency and long-term stability.
In conclusion, the CTLDM8120-M832DS BK is a high-performance Field Effect Transistor Array designed for high-power applications. It offers high levels of reliability and is suited for a wide range of applications due to its high efficiency and long-term stability. The FET array works on the same principle as other FETs, whereby an electric or voltage field is applied to the gate side of the transistor and the current flow can be regulated via the voltage on the Gate.
The specific data is subject to PDF, and the above content is for reference
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