CTLDM7590 TR Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The CTLDM7590 TR is a TMOS Unipolar, N Channel Enhancement Mode Field Effect Transistor (FET). It is a small signal, low noise device made using high voltage field effect technology. The device is designed for switching applications, featuring low on-resistance and low gate drive monotonic thresholds. The device is also suitable for use in applications that require high-input impedance, such as digital to analog converters. The CTLDM7590 TR is available in a range of package configurations, including the TO-252 package, which is suitable for high-density mounting of the device. It has an ESD rating of 8 kV HBM.

The CTLDM7590 TR has a broad range of applications in electronics, such as load switches, motor control, and audio/video switch applications. It is used as a direct replacement for the MOSFET Q2N channel devices in many designs. The device can be used as a switch in power supplies and voltage regulator applications. It can also be used as a high-side switch in several AC/DC converters. The device has a maximum power dissipation of 1.4W.

The working principle of the CTLDM7590 TR is based on the same principle that drives most FETs. The device is a type of transistor, which is composed of a drain, gate and source. The gate is separated from the source and drain by an insulation layer, called the gate oxide. When voltage is applied to the gate, it creates an electric field inside the oxidation layer, causing a “punching” effect that pushes electrons into the source and drain. This results in the current flowing through the FET. As voltage increases on the gate, more electrons are punched into the source and drain, resulting in higher current flowing through the device. At a certain voltage, the device saturates and is unable to conduct any more current.

The CTLDM7590 TR is manufactured using the latest manufacturing technologies, including thin oxide and spacer oxide isolation technologies. The thin oxide layer is used to create a thin gate insulator between the gate and the source, while the spacer oxide is used to create a spacer between the gate and drain. This leads to a lower on-resistance, lower charge leakage, and better immunity to latch-up. The device also features low gate-to-source resistance and high output current capability.

The CTLDM7590 TR has a number of features that make it an ideal choice for a wide range of applications. The device is suitable for both high current and low current switching applications, and the thin gate oxide makes it suitable for high-frequency switching applications. The device also has low on-resistance, monotonic thresholds, and a high-input impedance. The device is also highly immune to latch-up and has excellent thermal characteristics, making it suitable for a variety of applications. All in all, the CTLDM7590 TR is a versatile and valuable addition to any electronic design.

The specific data is subject to PDF, and the above content is for reference