CTLDM7120-M832DS BK

Series:	--
Part Status:	Last Time Buy
FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	1A (Ta)
Rds On (Max) @ Id, Vgs:	100 mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id:	1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	2.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	220pF @ 10V
Power - Max:	1.65W
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-TDFN Exposed Pad
Supplier Device Package:	TLM832DS

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CTLDM7120-M832DS BK is a type of transistor array specifically designed to be used in a variety of applications. Transistor arrays are used in a variety of applications due to their small size and flexibility. Transistor arrays are commonly used in the electronic industry for signal conditioning, switching, and amplification. CTLDM7120-M832DS BK transistor array is based on polysilicon gate DMOS Field Effect Transistor (FET) technology. It is made up of four N-channel enhancement mode FETs that are configured into an integrated circuit. The FETs are connected in a common source configuration with improved drive capabilities, making them ideal for a wide range of applications.The CTLDM7120-M832DS BK is made up of four N-channel enhancement mode MOSFETs which, when combined, provide the following features:• Low on-resistance• Low capacitance• Direct Interface• Fast Switching• Low Noise• High Output Power• High Reliability• Low CostsDue to its features, the CTLDM7120-M832DS BK is widely used in many applications, including the following:• Power switching: It is capable of driving larger loads with less power losses.• Polarity Protection: The FETs in this array are capable of providing a polarity protection circuit. This is useful in applications where you want to prevent reverse current flow. • Battery switching: This transistor array can be used to switch a battery on and off.• Power regulation: The low on-resistance and small gate capacitance makes this array suitable for power regulation applications.• Clock Circuits: The FETs in this array can be used to build clock circuits.• Amplification: The CTLDM7120-M832DS BK can be used to amplify small signals.The working principle of the CTLDM7120-M832DS BK transistor array is fairly simple. Basically, each of the four FETs is connected to its own gate, which controls the flow of current through the FET. A voltage applied to the gate causes a current to flow through the FET, thus providing amplification and/or voltage regulation. In conclusion, the CTLDM7120-M832DS BK is a type of transistor array specifically designed to be used in a variety of applications due to its small size and flexibility. It is based on polysilicon gate DMOS FET technology, and it is made up of four N-channel enhancement mode FETs that are configured into an integrated circuit. The FETs are connected in a common source configuration with improved drive capabilities, making it ideal for a wide range of applications, such as power switching, polarity protection, battery switching, power regulation, clock circuits, and amplification. The working principle of the array is fairly simple, as each of the FETs is controlled by its own gate to control the flow of current.

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