CTLDM3590 TR Discrete Semiconductor Products |
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Allicdata Part #: | CTLDM3590TR-ND |
Manufacturer Part#: |
CTLDM3590 TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | MOSFET N-CH 20V 0.16A TLM3D6D8 |
More Detail: | N-Channel 20V 160mA (Ta) 125mW (Ta) Surface Mount ... |
DataSheet: | CTLDM3590 TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 3-XFDFN |
Supplier Device Package: | TLM3D6D8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Power Dissipation (Max): | 125mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9pF @ 15V |
Vgs (Max): | 8V |
Gate Charge (Qg) (Max) @ Vgs: | 0.46nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3 Ohm @ 100mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.2V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 160mA (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The CTLDM3590 TR is a user-programmed, self-contained, low-cost and highly reliable device for discrete logic-level management and protection, primarily used in industrial and automotive digital applications. It is an ultra-low-capacitance, logic-level digital transistor with a breakdown voltage of 2.5V, and an optimized power dissipation capacity. This device has been developed to combine the advantages of both a MOSFET structure with the robust and reliable logistics performance of a bipolar transistor. When operating with a power supply of up to 10V, this device functions as an on/off switch and retains a low power dissipation, making it suitable for a variety of applications. This feature, combined with its high gain and low leakage, makes it an ideal solution for applications in which it needs to maintain a low-power state.
This CTLDM3590 TR application field includes motor and relays control, pulse width modulation, noise suppression, power switching and other automotive and industrial digital solutions.The working principle of this device is based on the fact that it is an active-low logic-level digital device that has a bypass diode for DC protection of sensitive circuits. The CTLDM3590 TR\'s bypass diode provides protection from electrical noise and ESD transient pulses. This device is designed to respond to input signals in the range of 0-2.5V and is equipped with a power resistor of 10 ohms which prevents any leakage current or short-circuit in situations where the device is not used.
The power MOSFET structure enables the CTLDM3590 TR to provide a rapid switching response and a low-capacitance design ensures maximum noise suppression.The gate input-threshold voltage is adjusted by changing the value of the internal resistor, which is located on the chip. Additionally, the built-in protection circuitry prevents the device from being left in an unknown state in case of an over-voltage fault. This allows the device to be used with confidence even in the most demanding applications.
In conclusion, the CTLDM3590 TR is a discrete logic-level MOSFET that combines the advantages of traditional bipolar transistors and MOSFETs. This device is highly reliable and suitable for a variety of automotive and industrial digital applications. Its low-capacitance ensures maximum noise suppression and its robust design ensures protection from transient pulses and over-voltage faults. This device has been designed to provide robust and reliable performance in the most demanding applications.
The specific data is subject to PDF, and the above content is for reference
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