CTLDM304P-M832DS TR Allicdata Electronics
Allicdata Part #:

CTLDM304P-M832DSTR-ND

Manufacturer Part#:

CTLDM304P-M832DS TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: MOSFET 2P-CH 30V 4.2A TLM832DS
More Detail: Mosfet Array 2 P-Channel (Dual) 30V 4.2A 1.65W Sur...
DataSheet: CTLDM304P-M832DS TR datasheetCTLDM304P-M832DS TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Last Time Buy
FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.2A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
Power - Max: 1.65W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TDFN Exposed Pad
Supplier Device Package: TLM832DS
Description

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The CTLDM304P-M832DS TR is an advanced field effect transistor array integrated circuit system. It consists of four IGBTs (Insulated Gate Bipolar Transistors) and two MOSFETs (Metal Oxide Semiconductor Field Effect Transistors). It is a versatile and unique product because of its multiple functions and capabilities. This device can be used for various applications, such as motor and lighting control, pulse control, and switching control.

The main purpose of this transistor array is to provide efficient power control and energy conversion. The IGBTs are able to handle voltage and current levels up to 32 Amps and up to 1000 Volts. This makes them suitable for power-on and power-off operations such as those used in motor drives and lighting control circuits. The two MOSFETs are designed for low power devices, such as digital logic and switching applications.

The CTLDM304P-M832DS TR is an ideal choice for digital logic applications and power electronics. This device utilizes advanced technologies to provide fast switching times, high-speed switching and low gate charge. It is capable of providing exceptional performance in high-frequency digital applications. The transistor array also provides excellent load and output current capabilities. Its wide Vin range makes it suitable for various power supply unit designs.

The working principle of this device is relatively straightforward. When a voltage is applied to the gate of one of the transistors, a channel is opened between the source and drain and current flow is enabled. This allows for switching operations to occur. The IGBTs are capable of operating at higher voltage and current levels than the MOSFETs, thus allowing for the post-power switching operations. The MOSFETs require only a relatively low gate charge to operate and can switch quickly, making them ideal for digital logic applications.

The CTLDM304P-M832DS TR is a powerful and reliable transistor array which is suitable for multiple applications. It is capable of providing fast switching times, high-speed switching and low gate charge. Its wide Vin range and current capabilities make it ideal for a variety of power supply unit designs and for efficient motors, lighting and switching control applications.

The specific data is subject to PDF, and the above content is for reference

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