CWDM3011N TR13 Discrete Semiconductor Products |
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Allicdata Part #: | CWDM3011NTR-ND |
Manufacturer Part#: |
CWDM3011N TR13 |
Price: | $ 0.19 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | MOSFET N-CH 30V 11A 8SOIC |
More Detail: | N-Channel 30V 11A (Ta) 2.5W (Ta) Surface Mount 8-S... |
DataSheet: | CWDM3011N TR13 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.16808 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 860pF @ 15V |
Vgs (Max): | 20V |
Gate Charge (Qg) (Max) @ Vgs: | 6.3nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 11A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The CWDM3011N TR13 is a single junction field-effect transistor. It is ideally suited for medium and high power switches, amplifiers, and voltage regulators. It has very high performance characteristics, with a very low input capacitance and high noise immunity.
The CWDM3011N TR13 field-effect transistor consists of a source, a gate, and a drain. The source is a metal contact which is connected to the source terminal. The gate is the transistor\'s control element and is connected to the gate terminal. The drain is the terminal that carries the current and is connected to the drain terminal.
When an appropriate electrical signal is applied to the gate terminal, the channel between the source and drain gets narrowed and this reduces the channel resistance. This decrease in the channel resistance is an indication of the transistor turning on and in turn the current starts flowing from the source to the drain. Also, depending upon the polarity of the applied signal, the current can flow in either direction. This makes the CWDM3011N TR13 a perfect choice for use in medium- and high-power applications.
The device also has excellent characteristics which make it ideal for use as an amplifier. It has very good gain-bandwidth power and high-input impedance. Moreover, it has good frequency responses, high power handling capabilities, and very low static power dissipation. With low operating temperature and reverse breakdown voltage, the device is also highly reliable. The device can handle up to 10V and so can be used in many applications, from power switching and amplification to voltage regulation.
The CWDM3011N TR13 is also suitable for use in low-noise circuits. Its very low input capacitance coupled with its high noise injection immunity makes it an excellent choice for applications such as attenuators and preamplifiers. Moreover, it has very good immunity to noise injection which makes it suitable for use in sensitive analog circuits. The device also features a wide input voltage range, making it ideal for use in various voltage-controlled circuits.
In summary, the CWDM3011N TR13 is a single junction field-effect transistor that is ideally suited for medium and high power switches, amplifiers, and voltage regulators. Its very low input capacitance and high noise immunity makes it perfect for use in low-noise circuits. It has excellent gain-bandwidth power and high-input impedance, as well as wide input voltage range for voltage-controlled circuits.
The specific data is subject to PDF, and the above content is for reference
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