CWDM3011P TR13 Discrete Semiconductor Products |
|
Allicdata Part #: | CWDM3011PTR-ND |
Manufacturer Part#: |
CWDM3011P TR13 |
Price: | $ 0.28 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | MOSFET P-CH 30V 11A 8SOIC |
More Detail: | P-Channel 30V 11A (Ta) 2.5W (Ta) Surface Mount 8-S... |
DataSheet: | CWDM3011P TR13 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.25213 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3100pF @ 8V |
Vgs (Max): | 20V |
Gate Charge (Qg) (Max) @ Vgs: | 80nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 11A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
CWDM3011P TR13 (CWDM3011P Thick Film Resistor) is a unique type of thick-film transistor that is used in a wide range of applications. It is a three-terminal, field-effect transistor (FET) that has been designed to be used in high-end, high-performance applications. It is also known as the parallel-gate FET or the tri-gate FET because it has three terminals. It is a popular choice for many applications in the electronics industry, particularly in recent years.
The primary function of CWDM3011P TR13 is to control the transfer of current between two components in a circuit. This is achieved by the series-gate concept, which utilizes a pair of independent gates to shape the current flow and increase the efficiency of the circuit. By doing so, the current can be accurately and quickly regulated. In addition, CWDM3011P TR13 has a high switching speed, making it suitable for high-frequency applications such as signal processors, distributed amplifiers, and high-speed modems. And since it has a high breakdown voltage, it can be used in high-voltage applications.
Compared to other types of transistors, CWDM3011P TR13 offers much higher performance in terms of electricity efficiency, noise immunity, and thermal stability. It also offers lower power consumption, making it more energy efficient. The transistor can also operate over a wide range of temperatures and frequencies, making it more suitable for harsh environments.
The working principle of CWDM3011P TR13 is similar to that of other FETs and MOSFETs. The device consists of two p-type regions that are separated by an oxide layer. In each region, there is a gate terminal that controls the current flow between the two regions. When a voltage is applied to the gate terminals, an electrical field forms between the two regions and a bias current is generated. This bias current can be used to control the flow of current.
CWDM3011P TR13 is widely used in many types of electronic devices, such as portable electronic devices and programmable logic controllers. It is also used in amplifiers, power converters, motor drives, and power electronic controllers. Furthermore, it can be used in low-noise circuits and power amplifier circuits. Its high performance, low power consumption and wide operating temperature range make it an ideal choice for many applications.
Overall, CWDM3011P TR13 is a reliable and versatile FET that can be used in a variety of applications. It offers high performance, low power consumption, and wide operating temperature range, making it an ideal choice for many applications. It also has a high breakdown voltage, which allows it to be used in high-voltage applications. And since it has three terminals, it can be used in both parallel and series gate configurations, making it a versatile and reliable solution for many applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
FWSF-M/D-1310/CWDM | Finisar Corp... | 180.66 $ | 1000 | TXRX CWDM PLUGIN SC CONNE... |
FWSF-M/D-1310/CWDM-LC | Finisar Corp... | 180.66 $ | 1000 | TXRX CWDM PLUGIN LC CONNE... |
FWSF-M/D-1550/CWDM-2 | Finisar Corp... | 180.66 $ | 1000 | TXRX CWDM PLUGIN SC CONNE... |
FWSF-M/D-1550/CWDM-2-LC | Finisar Corp... | 180.66 $ | 1000 | TXRX CWDM PLUGIN SC CONNE... |
FWSF-M/D-1310/CWDM-4-LC | Finisar Corp... | 459.93 $ | 1000 | TXRX CWDM PLUGIN LC CONNE... |
FWSF-M/D-1310/CWDM-8-LC | Finisar Corp... | 0.69 $ | 1000 | TXRX CWDM PLUGIN LC CONNE... |
FWSF-M/D-1550/CWDM | Finisar Corp... | 0.69 $ | 1000 | TXRX CWDM PLUGIN SC CONNE... |
FWSF-M/D-1550/CWDM-LC | Finisar Corp... | 0.69 $ | 1000 | TXRX CWDM PLUGIN LC CONNE... |
CWDM305P TR13 | Central Semi... | 0.09 $ | 1000 | MOSFET P-CH 16V 5.3A 8SOI... |
CWDM305N TR13 | Central Semi... | 0.09 $ | 1000 | MOSFET N-CH 30V 5.8A 8SOI... |
CWDM305PD TR13 | Central Semi... | 0.13 $ | 1000 | MOSFET 2P-CH 30V 5.3A 8SO... |
CWDM3011N TR13 | Central Semi... | 0.19 $ | 1000 | MOSFET N-CH 30V 11A 8SOIC... |
CWDM3011P TR13 | Central Semi... | 0.28 $ | 1000 | MOSFET P-CH 30V 11A 8SOIC... |
CWDM305ND TR13 | Central Semi... | 0.22 $ | 1000 | MOSFET 2N-CH 30V 5.8A 8SO... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...