CWDM3011P TR13 Allicdata Electronics

CWDM3011P TR13 Discrete Semiconductor Products

Allicdata Part #:

CWDM3011PTR-ND

Manufacturer Part#:

CWDM3011P TR13

Price: $ 0.28
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: MOSFET P-CH 30V 11A 8SOIC
More Detail: P-Channel 30V 11A (Ta) 2.5W (Ta) Surface Mount 8-S...
DataSheet: CWDM3011P TR13 datasheetCWDM3011P TR13 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.25213
Stock 1000Can Ship Immediately
$ 0.28
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 8V
Vgs (Max): 20V
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 20 mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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CWDM3011P TR13 (CWDM3011P Thick Film Resistor) is a unique type of thick-film transistor that is used in a wide range of applications. It is a three-terminal, field-effect transistor (FET) that has been designed to be used in high-end, high-performance applications. It is also known as the parallel-gate FET or the tri-gate FET because it has three terminals. It is a popular choice for many applications in the electronics industry, particularly in recent years.

The primary function of CWDM3011P TR13 is to control the transfer of current between two components in a circuit. This is achieved by the series-gate concept, which utilizes a pair of independent gates to shape the current flow and increase the efficiency of the circuit. By doing so, the current can be accurately and quickly regulated. In addition, CWDM3011P TR13 has a high switching speed, making it suitable for high-frequency applications such as signal processors, distributed amplifiers, and high-speed modems. And since it has a high breakdown voltage, it can be used in high-voltage applications.

Compared to other types of transistors, CWDM3011P TR13 offers much higher performance in terms of electricity efficiency, noise immunity, and thermal stability. It also offers lower power consumption, making it more energy efficient. The transistor can also operate over a wide range of temperatures and frequencies, making it more suitable for harsh environments.

The working principle of CWDM3011P TR13 is similar to that of other FETs and MOSFETs. The device consists of two p-type regions that are separated by an oxide layer. In each region, there is a gate terminal that controls the current flow between the two regions. When a voltage is applied to the gate terminals, an electrical field forms between the two regions and a bias current is generated. This bias current can be used to control the flow of current.

CWDM3011P TR13 is widely used in many types of electronic devices, such as portable electronic devices and programmable logic controllers. It is also used in amplifiers, power converters, motor drives, and power electronic controllers. Furthermore, it can be used in low-noise circuits and power amplifier circuits. Its high performance, low power consumption and wide operating temperature range make it an ideal choice for many applications.

Overall, CWDM3011P TR13 is a reliable and versatile FET that can be used in a variety of applications. It offers high performance, low power consumption, and wide operating temperature range, making it an ideal choice for many applications. It also has a high breakdown voltage, which allows it to be used in high-voltage applications. And since it has three terminals, it can be used in both parallel and series gate configurations, making it a versatile and reliable solution for many applications.

The specific data is subject to PDF, and the above content is for reference

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