| Allicdata Part #: | CWDM305NTR-ND |
| Manufacturer Part#: |
CWDM305N TR13 |
| Price: | $ 0.09 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Central Semiconductor Corp |
| Short Description: | MOSFET N-CH 30V 5.8A 8SOIC |
| More Detail: | N-Channel 30V 5.8A (Ta) 2W (Ta) Surface Mount 8-SO... |
| DataSheet: |  CWDM305N TR13 Datasheet/PDF |
| Quantity: | 1000 |
| 7500 +: | $ 0.08377 |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SOIC |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 560pF @ 10V |
| Vgs (Max): | 20V |
| Gate Charge (Qg) (Max) @ Vgs: | 6.3nC @ 5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 30 mOhm @ 2.9A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 5.8A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The CWDM305N TR13 is a single type MOSFET used in the field of electrical engineering. It is often used in high voltage and high current applications. The device is manufactured using low-voltage MOSFETs that are specifically designed to provide superior current-handling capability in high switching applications. The device’s low on-state resistance (RDSN) and easily controllable gate voltage gives it exceptionally stable performance in turbulent conditions.
The CWDM305N TR13 offers excellent thermal resistance and short circuit protection, making it suitable for use in high reliability and safety-critical systems. Because of its high current-handling capability, it is well suited for applications such as motor drives, high power regulators and high power converters. It is also suitable for applications such as high-voltage switching, power factor correction, power factor switching and power control applications.
The working principle of the CWDM305N TR13 is based on the MOSFET switching action. When a positive voltage is applied to the gate of the transistor, it turns on, allowing a current to flow through the device. This current is limited by the RDSN parameter, which is set by the process that the device is fabricated from. When the gate voltage is lowered, the transistor will turn off and the current will cease to flow through the device. The switching action is directly influenced by the gate voltage and the total current flow through the device will be limited by the RDSN parameter.
The CWDM305N TR13 is a robust and reliable power semiconductor device with many important applications in the field of electrical engineering. It is highly resistant to thermal cycling and overloads, which makes it suitable for use in harsh conditions. Furthermore, the device offers excellent current-handling capability and provides superior switching performance. The CWDM305N TR13 is an ideal choice for a variety of high power switching and power conversion applications.
The specific data is subject to PDF, and the above content is for reference
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