CY15B104Q-SXI Allicdata Electronics
Allicdata Part #:

428-3413-ND

Manufacturer Part#:

CY15B104Q-SXI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FRAM 4M SPI 40MHZ 8SOIC
More Detail: FRAM (Ferroelectric RAM) Memory IC 4Mb (512K x 8) ...
DataSheet: CY15B104Q-SXI datasheetCY15B104Q-SXI Datasheet/PDF
Quantity: 2816
Stock 2816Can Ship Immediately
Specifications
Series: F-RAM™
Packaging: Tube 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 4Mb (512K x 8)
Clock Frequency: 40MHz
Write Cycle Time - Word, Page: --
Memory Interface: SPI
Voltage - Supply: 2 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC
Description

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Memory

CY15B104Q-SXI is a double data rate synchronous Static Random Access Memory (SRAM) offering sub nanosecond access times. It is a high-speed, low-power and high-density memory device. It fits into a 16Mbit (1Mb x 16-bit) configuration, organized into 256K banks of 1Kx16 bit. It offers very fast access times, making it highly suitable for applications where fast memory access is a must, such as processors, DMA, networking, storage and other embedded systems.

The CY15B104Q-SXI memory device is equipped with a high-speed register-based write buffer to store data for fast transfer. It supports one or several read/write operations, depending on the number of cells used. The device can also support various pipeline strategies to reduce performance latency.

The CY15B104Q-SXI memory utilizes two pipelines - a write pipeline and a read pipeline. The write pipeline handles data write operations and stores the data in the write buffer until it is written to the array. The read pipeline handles data read operations and retrieves the data from the array to be sent to the user. The data is transferred serially, allowing two-way pipelining of the read and write operations.

The CY15B104Q-SXI memory also provides 10-bit error correcting code (ECC) which is capable of correcting single bit errors, thus providing enhanced memory reliability. The 10-bit ECC is suitable for use in critical applications where data integrity and reliability are of utmost importance.

In summary, the CY15B104Q-SXI is a high-speed, low-power, high-density Static Random Access Memory (SRAM) device. It features a high-speed register-based write buffer, one or several read/write operations, 10-bit error correcting code (ECC) and two pipelines for fast operation. It is suitable for use in processors, DMA, networking, storage and other embedded systems.

The specific data is subject to PDF, and the above content is for reference

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