DDTA114GUA-7-F

DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 5mA, 5V
Base Part Number:	DDTA114
Supplier Device Package:	SOT-323
Package / Case:	SC-70, SOT-323
Mounting Type:	Surface Mount
Power - Max:	200mW
Frequency - Transition:	250MHz
Current - Collector Cutoff (Max):	500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic:	300mV @ 500µA, 10mA
Series:	--
Resistor - Emitter Base (R2):	10 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	PNP - Pre-Biased
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The DDTA114GUA-7-F is a single transistor, pre-biased type bipolar junction transistor (BJT). The transistor has a collector-emitter voltage of 6.0 volts, making it suitable for a range of applications. It is manufactured by Fairchild Semiconductor, a renowned provider of semiconductor solutions. This article will discuss the application field and working principle of the DDTA114GUA-7-F.

Application Field

The DDTA114GUA-7-F is used in a variety of different applications. It can be used for amplification of signals, switching of loads, and as a pre-driver in power amplifiers. It is also used in transconductor circuits and dynamic feedback loops.Due to its low collector-emitter voltage, the DDTA114GUA-7-F can also be used in low voltage applications. This makes it ideal for use in portable devices, such as wireless phones and medical monitoring equipment.The DDTA114GUA-7-F is also popular for use in automotive applications, and can be found in a variety of automotive systems, such as cruise control, fuel injection, and power seat control.

Working Principle

The DDTA114GUA-7-F is a pre-biased single bipolar junction transistors (BJT). This means that, unlike an un-biased BJT, the bases of the two transistors within the DDTA114GUA-7-F are already connected together and to the positive bias voltage.The common base-emitter junction forms a forward biased connection with the positive bias voltage, allowing for current to flow from collector to the emitter side of the transistor. This current, in turn, controls the current flow from the collector to the emitter.When the base-emitter junction is forward biased, the collector-emitter voltage is lowered, allowing current to flow, and allowing the transistor to amplify or switch electrical signals.

Conclusion

The DDTA114GUA-7-F is a pre-biased, single bipolar junction transistors. It is used in a variety of different applications, including amplification of signals, switching of loads, and transconductor circuits. Its low collector-emitter voltage also makes it suitable for use in low voltage applications, as well as in automotive applications. Its working principle is based on the forward biasing of the common base-emitter junction, resulting in a lowered collector-emitter voltage, allowing current to flow and allowing the transistor to amplify or switch electrical signals.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description