DDTA123TUA-7 Discrete Semiconductor Products

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Bipolar junction transistors or BJTs are an important part of many integrated circuits. They are used to amplify or switch signals and can be found in virtually all modern electronics. One example of a bipolar junction transistor is the DDTA123TUA-7; pre-biased, single transistors are among the most common types.

The DDTA123TUA-7 is an NPN bipolar junction transistor, meaning it is composed of two P-type semiconductor layers separated by an N-type semiconductor layer. It is designed to operate between -55°C and +150°C, allowing it to be used in a wide variety of applications. It has a DC current gain of 20-40 and a collector current rating of 25 mA. It can handle collector-emitter voltages up to 70 V.

The DDTA123TUA-7 is pre-biased, meaning it is already biased with a small voltage. This allows for the transistor to be used with less complex circuitry, decreasing the amount of components needed. This makes the DDTA123TUA-7 especially useful in applications where components need to be replaced quickly and reliably.

Applications for the DDTA123TUA-7 include analog and digital switching, linear amplification, and pulse width modulation (PWM). It can also be used to provide isolation between two power supplies, preventing cross-talk between them. Additionally, it can be used in wireless communication systems to increase signal to noise ratio. One example of a wireless communication system that uses the DDTA123TUA-7 is car door remotes. It can be used to amplify or switch the signal received by the receiver.

The working principle of the DDTA123TUA-7 is fairly simple. When a small bias voltage is applied to the base of the transistor, it causes a current to begin flowing from the emitter to the collector. The current flowing from the collector causes a larger current to flow from the emitter. This current can be amplified or switched as needed for the particular application.

In summary, the DDTA123TUA-7 is a pre-biased, single, NPN bipolar junction transistor. It has a wide operating temperature range and can handle up to 70 V of collector-emitter voltage. It is used for a variety of purposes, including switching and linear amplification, as well as isolation between power supplies. Its working principle is based on the flow of current when a small bias voltage is applied to the base of the transistor.

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