DDTA115TE-7-F

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	100 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 100µA, 1mA
Current - Collector Cutoff (Max):	500nA (ICBO)
Frequency - Transition:	250MHz
Power - Max:	150mW
Mounting Type:	Surface Mount
Package / Case:	SOT-523
Supplier Device Package:	SOT-523
Base Part Number:	DDTA115

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Introduction to DDTA115TE-7-F

The DDTA115TE-7-F is a single, pre-biased bipolar transistor (BJT). It is housed in a TO-92 package, which is small and inexpensive, and is a popular choice for many industrial and consumer electronic applications. The DDTA115TE-7-F is a PNP transistor, meaning it is connected to an NPN transistor in order to switch current in one direction.

Application Field of DDTA115TE-7-F

The DDTA115TE-7-F can be used in a wide range of applications such as amplifiers, power switches, LED drivers, low-noise amplification, current sources, and switching regulators. It is often found in consumer electronics, particularly in logic circuits, audio systems, appliances, and various computer components. The DDTA115TE-7-F is well-suited for use in low-voltage, low-power applications due to its high breakdown voltage and current gain. It is designed to operate in temperature environments ranging from -65°C to +150°C and has a low thermal resistance.

Working Principle of DDTA115TE-7-F

The DDTA115TE-7-F is a PNP transistor, meaning it is connected to an NPN transistor in order to switch current in one direction. When current flows through the NPN transistor, it turns on the PNP transistor. This current flow then supplies power to the load. The DDTA115TE-7-F operates on the principle of current flow, with the attenuated voltage across the collector then sent to the base to turn on the transistor. When the base is connected to the emitter, it completes a loop which controls the current flowing through the collector. The main advantage of the DDTA115TE-7-F is its low current consumption and high efficiency. Unlike other power supplies, the DDTA115TE-7-F uses current mirrors to control the amount of current flowing through the collector, so it can be used in low voltage environments without consuming too much power.

Conclusion

The DDTA115TE-7-F is a single, pre-biased PNP bipolar transistor (BJT). Its small size, low cost, and wide range of applications make it a popular choice for many industrial and consumer electronic solutions. Additionally, its low current consumption and high efficiency make it ideal for use in low voltage, low power applications. Understanding the basic principles of the DDTA115TE-7-F makes it easier to implement into designs for a variety of applications.

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