Allicdata Part #: | DDTA115TCA-FDITR-ND |
Manufacturer Part#: |
DDTA115TCA-7-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS PNP 200MW SOT23-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DDTA115TCA-7-F Datasheet/PDF |
Quantity: | 6000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Base Part Number: | DDTA115 |
Supplier Device Package: | SOT-23-3 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 100µA, 1mA |
Series: | -- |
Resistor - Base (R1): | 100 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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Bipolar Junction Transistors (BJT) are electronic components designed for use on electrical circuits as amplifiers and switches. The DDTA115TCA-7-F is an example of a Single, Pre-Biased Transistor. Used in light-duty switching applications and suitable for linear operation, they are ideal when a low on-state resistance, high quality and strong current capacity is desired. Their features also include low gate-source and gate-drain capacitance, both of which guarantee low switching losses.
This type of transistor is substantial in transitioning small currents flowing through the device, collecting them, and then releasing them when certain conditions are met. Though, the current is released at a larger power level which then creates an amplified copy. Operating with two PN-junctions and three terminals, it is designed to work as a switch or amplifier for small signals, for example in audio amplifiers and oscillators. The DDTA115TCA-7-F’s working principle consists of a positive voltage applied to the base terminal and a negative voltage applied to the collector terminal. This forward bias of the base-emitter junction causes the transistor to enter into forward conduction and allows for current to flow from the collector to the emitter.
The DDTA115TCA-7-F’s primary application field is radio frequency (RF) amplifiers. These devices are well-suited to the amplification of the high frequencies found in radio transmissions. The transistor’s small dimensions and high precision ensure that small-signal devices can function precisely and with greater stability. Additionally, the transistor is used on cell phone antennas, GPS receivers and Wi-Fi devices, amongst others. It can also be utilized in audio amplifier circuits, regulated dc power supplies, oscillators, as well as stages within radio amplifiers. Additionally, they are great amplifiers for micro controllers and microprocessors, digital transceivers, medical instrumentation, and hearing aids.
In sum, the DDTA115TCA-7-F is a Single, Pre-Biased Bipolar Junction Transistor. It works as a switch or an amplifier for small signals in radio frequency applications and many other electronic circuits. The transistor is designed for use as an amplifier when a low on-state resistance, high quality and strong current capacity is desired and for its low gate-source and gate-drain capacitance which culminates in low switching losses. By releasing current at large power levels, the amplifier amplifies and creates a copied small signal. Ultimately, the DDTA115TCA-7-F is a versatile and powerful tool in the field of electrical engineering.
The specific data is subject to PDF, and the above content is for reference
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