DDTA123ECA-7 Allicdata Electronics
Allicdata Part #:

DDTA123ECADITR-ND

Manufacturer Part#:

DDTA123ECA-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS PNP 200MW SOT23-3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DDTA123ECA-7 datasheetDDTA123ECA-7 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Base Part Number: DDTA123
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR) 
Description

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A DDTA123ECA-7 is a type of bipolar (BJT) single, pre-biased transistor. Due to their lower power and greater bias stability, pre-biased transistors are becoming increasingly popular in many applications.

The DDTA123ECA-7 is a N-type device and is manufactured using advanced planar technology. It is available in 2 packages, a 2-pin TO-92 for PCB placement and a 3-pin TO-220 for mounting on a heat sink. Both packages have a power rating of 100V maximum and a maximum continuous collector current of 0.8A. The DC and AC current gain is typically 300 and the peak forward current is 2.5A.

The DDTA123ECA-7 has a range of applications due to its wide range of operating parameters and pre-biased state. It can be used as an amplifier, with its low power usage allowing amplifier circuits to be run off batteries or other small power sources. The transistor can also be used as a switch to control the flow of current in heated devices, allowing for precise temperature control.

The working principle of the DDTA123ECA-7 is based on the transistor effect, which occurs when a small change in voltage at the base causes a large change in current at the collector and emitter. In a pre-biased transistor, this voltage is already present at the base and is known as the bias voltage. This pre-biasing results in a smaller change in voltage at the base to get the same current change at the collector and emitter, resulting in a greater control and stability.

The bias voltage depends on the type of pre-biasing chosen for a particular application. In the case of the DDTA123ECA-7 the bias voltage is typically 0.7V. This means that the transistor will conduct current when the voltage at the base is above 0.7V, and will not conduct current when the voltage at the base is below 0.7V.

In conclusion, the DDTA123ECA-7 is a pre-biased bipolar (BJT) single transistor which is suitable for use in a range of applications requiring low power and greater bias stability. Its operation is based on the transistor effect, leveraging the bias voltage present at the base to cause a large change in current with only a small change in voltage.

The specific data is subject to PDF, and the above content is for reference

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