DDTA123JKA-7-F Allicdata Electronics
Allicdata Part #:

DDTA123JKA-7-F-ND

Manufacturer Part#:

DDTA123JKA-7-F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS PNP 200MW SC59-3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DDTA123JKA-7-F datasheetDDTA123JKA-7-F Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Base Part Number: DDTA123
Supplier Device Package: SC-59-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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DDTA123JKA-7-F Application Field and Working Principle

DDTA123JKA-7-F is classified as a single, pre-biased transistor belonging to the bipolar (BJT) family. It operates on the common-emitter principle, in which a voltage applied to the base control pin controls the output current flowing from the collector pin.

Electrical Characteristics

The DDTA123JKA-7-F is a low-power transistor that can be configured for low current input/output applications, including audio amplification and switching circuits. It features a collector-emitter voltage (Vce) of 30V, a base-emitter voltage (Vbe) of 1.5V, and a Gain Bandwidth Product (GBP) of 50MHz at 1mA collector current (Ic). This makes it ideal for frequency range-sensitive applications such as AC or DC servomotors and solenoids, where it can provide improved dynamic performance.

Internal Structure and Operation

The DDTA123JKA-7-F has an NPN architecture, composed of a thin vertical slice of base material and two pairs of vertical emitter and collector contacts. The base-emitter junction is reverse-biased when the transistor is in the "off" state, allowing no current to flow through the device. When a positive voltage is applied to the base, the junction becomes forward-biased, allowing a current to flow from the collector to the emitter. The current is proportional to the voltage applied to the base, up to the maximum fully-biased voltage of 1.5V.

Due to its pre-biased construction, the DDTA123JKA-7-F has improved switching characteristics and requires less current to switch between on and off states. This makes it ideal for low-power applications such as audio amplifiers, radio receivers, and low-power switching circuits.

Applications

The DDTA123JKA-7-F can be used in a wide range of applications that require a moderately powered transistor with fast switching and good linearity characteristics. These include audio amplification (particularly guitar amplifiers and other musical instruments,) audio processing, radio receivers, DC servomotors, and other LOW-VOLTAGE DC circuits. It is also used in discrete class-D audio amplifiers, in which it is used to switch a dual-channel power transconductance amplifier for low-voltage audio amplification.

Conclusion

The DDTA123JKA-7-F is a single, pre-biased transistor belonging to the bipolar (BJT) family. It features a low-power design, a collector-emitter voltage of 30V, a base-emitter voltage of 1.5V, and a Gain Bandwidth Product of 50MHz at 1mA collector current. This makes it ideal for low-power applications that require fast switching and good linearity characteristics. It can be used in a wide range of applications, including audio amplification, radio receivers, and DC servomotors.

The specific data is subject to PDF, and the above content is for reference

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