
Allicdata Part #: | DDTA123JKA-7-F-ND |
Manufacturer Part#: |
DDTA123JKA-7-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS PNP 200MW SC59-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Base Part Number: | DDTA123 |
Supplier Device Package: | SC-59-3 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 2.2 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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DDTA123JKA-7-F Application Field and Working Principle
DDTA123JKA-7-F is classified as a single, pre-biased transistor belonging to the bipolar (BJT) family. It operates on the common-emitter principle, in which a voltage applied to the base control pin controls the output current flowing from the collector pin.
Electrical Characteristics
The DDTA123JKA-7-F is a low-power transistor that can be configured for low current input/output applications, including audio amplification and switching circuits. It features a collector-emitter voltage (Vce) of 30V, a base-emitter voltage (Vbe) of 1.5V, and a Gain Bandwidth Product (GBP) of 50MHz at 1mA collector current (Ic). This makes it ideal for frequency range-sensitive applications such as AC or DC servomotors and solenoids, where it can provide improved dynamic performance.
Internal Structure and Operation
The DDTA123JKA-7-F has an NPN architecture, composed of a thin vertical slice of base material and two pairs of vertical emitter and collector contacts. The base-emitter junction is reverse-biased when the transistor is in the "off" state, allowing no current to flow through the device. When a positive voltage is applied to the base, the junction becomes forward-biased, allowing a current to flow from the collector to the emitter. The current is proportional to the voltage applied to the base, up to the maximum fully-biased voltage of 1.5V.
Due to its pre-biased construction, the DDTA123JKA-7-F has improved switching characteristics and requires less current to switch between on and off states. This makes it ideal for low-power applications such as audio amplifiers, radio receivers, and low-power switching circuits.
Applications
The DDTA123JKA-7-F can be used in a wide range of applications that require a moderately powered transistor with fast switching and good linearity characteristics. These include audio amplification (particularly guitar amplifiers and other musical instruments,) audio processing, radio receivers, DC servomotors, and other LOW-VOLTAGE DC circuits. It is also used in discrete class-D audio amplifiers, in which it is used to switch a dual-channel power transconductance amplifier for low-voltage audio amplification.
Conclusion
The DDTA123JKA-7-F is a single, pre-biased transistor belonging to the bipolar (BJT) family. It features a low-power design, a collector-emitter voltage of 30V, a base-emitter voltage of 1.5V, and a Gain Bandwidth Product of 50MHz at 1mA collector current. This makes it ideal for low-power applications that require fast switching and good linearity characteristics. It can be used in a wide range of applications, including audio amplification, radio receivers, and DC servomotors.
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