DDTA124EKA-7-F Allicdata Electronics
Allicdata Part #:

DDTA124EKA-7-F-ND

Manufacturer Part#:

DDTA124EKA-7-F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS PNP 200MW SC59-3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DDTA124EKA-7-F datasheetDDTA124EKA-7-F Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Base Part Number: DDTA124
Supplier Device Package: SC-59-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The DDTA124EKA-7-F is a pre-biased single bipolar junction transistor (BJT) which offers not only great functionality, but also improved electrical performance. This component was designed to be used in RF/IF signal processing applications, such as audio amplifiers, power supplies, and power switching.

A transistor is a semiconductor device that is used to control electric current and act as an amplifier or switch. There are two main types: BJTs and field effect transistors (FETs). The DDTA124EKA-7-F is a BJT which utilizes a common emitter configuration. This type of transistor offers excellent linearity and gain, and is often used in amplifying small signals.

The basic working principle of a BJT is quite simple. The Collector (C) is connected to the emitter (E) and base (B) terminals to form a closed circuit. When a small current is applied to the base (B) terminal, the amplified current follows through the emitter (E) terminal and into collector (C). This current is then fed back to the base (B) as a small reverse current to complete the circuit.

The DDTA124EKA-7-F has a maximum reverse current of 1.5 µA and a current gain of 80. The pre-biased configuration of this BJT allows for more efficient amplifier design, as well as higher gains. In addition, the device has an improved frequency response and low distortion. This reduces interference and makes it suitable for high-fidelity audio applications.

The DDTA124EKA-7-F is ideal for use in a wide variety of applications, including audio amplifiers, power supplies, power switching, and RF/IF signal processing. This device is capable of handling some of the most demanding requirements, making it an ideal choice for any project. It is also very low-cost and can be easily integrated into any existing system.

In conclusion, the DDTA124EKA-7-F transistor is an excellent choice for a wide range of applications. Its ability to handle demanding requirements and its improved electrical performance make it ideal for use in high-fidelity audio applications, power supplies, and RF/IF signal processing. Its pre-biased configuration also makes it more efficient, reducing interference and providing higher gains. This low-cost device is sure to improve any system that it is integrated into.

The specific data is subject to PDF, and the above content is for reference

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