DDTA143EKA-7-F Allicdata Electronics
Allicdata Part #:

DDTA143EKA-7-F-ND

Manufacturer Part#:

DDTA143EKA-7-F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS PNP 200MW SC59-3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DDTA143EKA-7-F datasheetDDTA143EKA-7-F Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V
Base Part Number: DDTA143
Supplier Device Package: SC-59-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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As technological advances rapidly move into the forefront of the electronics industry, manufacturers are continuously looking for ways to make the most of various components. One such piece of technology is the DDTA143EKA-7-F bipolar junction transistor (BJT), a single semiconductor device designed to regulate current or voltage flow. This article will discuss the application field and working principle of this device, highlighting its advantages.

The DDTA143EKA-7-F transistor is categorized as a single pre-biased transistor, which means that the device is connected to a voltage potential before the current is switched. This process is known as ‘self-biasing’, and it allows the device to be optimized for its particular application. The DDTA143EKA-7-F transistor is specifically designed to operate in high-power, high-voltage environments, such as in automobile electronic control units (ECU), industrial robotics, and relays for lighting and power systems.

When considering its application field, the DDTA143EKA-7-F transistor has several advantages over other semiconductor devices. Due to its pre-biased design, it is capable of withstand higher voltages and provide greater protection against power surges. Furthermore, its high-power capability allows it to be used in applications where other components would be unable to handle the load.

In terms of its working principle, the DDTA143EKA-7-F transistor is composed of three layers: a P-type layer, an N-type layer, and a floating gate. These layers are separated by a thin insulating layer called a dielectric material and serv to create a three-terminal device known as a PNP transistor. In order to control the current flow, the transistor utilizes the variable resistance of the dielectric material. This variable resistance is known as "Transconductance", and is responsible for controlling the ‘bias’ of the device.

When a voltage is applied to the external terminals of the transistor, current begins to flow through the transistor and is regulated by the dielectric material. This process is known as "bias point regulation", which refers to the amount of current that is transferred between the P and N terminals. The P and N terminals, referred to as the collector and the base, respectively, are also responsible for controlling the current flow. Consequently, by adjusting the collector and base voltages, the current flow can be regulated or "trimmed".

In conclusion, the DDTA143EKA-7-F is an advanced transistor for electronics applications that require high-power and pre-biasing capabilities. Thanks to its dielectric material, it is able to withstand higher voltages and provide greater protection against power surges. Additionally, its bias point regulation capability allows it to be accurately ‘trimmed’ for its particular application.

The specific data is subject to PDF, and the above content is for reference

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