DDTA143FE-7 Allicdata Electronics
Allicdata Part #:

DDTA143FEDITR-ND

Manufacturer Part#:

DDTA143FE-7

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS PNP 150MW SOT523
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DDTA143FE-7 datasheetDDTA143FE-7 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
30000 +: $ 0.05530
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Resistor - Emitter Base (R2): 22 kOhms
Base Part Number: DDTA143
Supplier Device Package: SOT-523
Package / Case: SOT-523
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 10mA, 5V
Series: --
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Discontinued at Digi-Key
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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DDTA143FE-7 is a single, pre-biased, bipolar junction transistor (BJT). This device is designed for use in audio, RF, digital circuits and general purpose devices. It is suitable for use in switching applications and can operate at frequencies up to 160MHz. The maximum operating temperature for this device is 175°C.

The DDTA143FE-7 is a Darlington type BJT with a low current gain-bandwidth product of approximately 100MHz. This device has an open-base collector-emitter saturation voltage of 0.6V and a base-emitter voltage of 1.5V. It offers good switching performance with a transition time of 100ns. The device also features a very low input current of 10mA maximum, and an on-state collector current of 1A.

The DDTA143FE-7 consists of two bipolar transistors connected in a Darlington configuration. The two transistors are connected in a common emitter configuration, with the emitter electrode of the second transistor being connected to the collector electrode of the first transistor. This configuration provides the device with greater base-emitter voltage, collector-emitter current, and gain compared to a single transistor. As a result, the DDTA143FE-7 is capable of switching high current loads with high efficiency.

The Darlington configuration also provides the DDTA143FE-7 with excellent stability and low noise performance. This configuration results in an operating frequency range of up to 160MHz, which makes the device suitable for a large range of applications. In addition, the device has a very low base-emitter voltage of 1.5V, allowing for low-power operation. This makes the device suitable for use in battery operated applications.

The DDTA143FE-7 is a versatile device that can be used in a wide range of applications. It is suitable for use in audio applications such as amplifiers, equalizers and noise reduction circuits. It is also suitable for use in RF applications such as receivers, transmitters and oscillators. In addition, the device is suitable for digital circuits such as data converters and microprocessors.

In summary, the DDTA143FE-7 is a single, pre-biased, bipolar junction transistor (BJT). It is designed for use in audio, RF, digital circuits and general purpose applications. It is suitable for switching applications and can operate at frequencies up to 160MHz. The device has an open-base collector-emitter saturation voltage of 0.6V, a base-emitter voltage of 1.5V, an input current of 10mA maximum, and an on-state collector current of 1A. It provides excellent switching performance with a transition time of 100ns and offers excellent stability and low-noise performance.

The specific data is subject to PDF, and the above content is for reference

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