DDTA123YCA-7 Allicdata Electronics
Allicdata Part #:

DDTA123YCADITR-ND

Manufacturer Part#:

DDTA123YCA-7

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS PNP 200MW SOT23-3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DDTA123YCA-7 datasheetDDTA123YCA-7 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
30000 +: $ 0.04823
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Resistor - Emitter Base (R2): 10 kOhms
Base Part Number: DDTA123
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Series: --
Resistor - Base (R1): 2.2 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Discontinued at Digi-Key
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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Transistors - Bipolar (BJT) - Single, Pre-Biased

The DDTA123YCA-7 is a silicon NPN transistor device, in which the collector current is pre-biased. The transistor is the most widely used type of active semiconductor device, and is a key building block in both analog and digital electronic circuit applications. It utilizes a pnp or npn semiconductor structure, and is typically used in high-speed switching applications. The DDTA123YCA-7 is particularly well-suited for a variety of applications requiring high-speed switching, reliable operation, and minimal thermal effect.

Application Field

The DDTA123YCA-7 is best suited for applications such as power amplifiers, power switching, audio amplifiers, and low-noise amplifier stages. In terms of digital applications, it has been used in logic gates, multiplexers, binary flip-flops, and logic inverters. It is particularly well-suited for medium and high-power switching of medium to high power signals, and can operate at high speeds with minimal distortion.

Working Principle

The DDTA123YCA-7 utilizes a pnp or npn semiconductor structure and is typically used in high-speed switching applications. The transistor has three terminals—the base, collector and emitter, which serve as the controlled and output terminals. When current is applied to the base terminal, the transistor current begins to flow between the collector and emitter terminals. This transistor current is controlled by the voltage applied to the base. The basic principle is that when a fixed current is applied to the base, the collector current, which is the output current, is also a fixed current. Thus, by precisely controlling the base voltage, the amount of collector current flowing from the collector terminal can be adjusted, and this is the basic operating principle of the transistor.

The DDTA123YCA-7 provides excellent switching speed, high switching current, and low collector-emitter saturation voltage. These features make it an ideal choice for many high-speed switching applications. Furthermore, it provides improved levels of performance due to its pre-biased operation and minimal thermal effects when compared to other types of transistors.

Conclusion

The DDTA123YCA-7 is a silicon NPN transistor device with pre-biased collector current that is ideal for high-speed switching applications. It provides excellent switching speed, high switching current, and low collector-emitter saturation voltage. Additionally, its pre-biased collector current and minimal thermal effect makes the DDTA123YCA-7 a versatile and powerful device for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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