Allicdata Part #: | DDTA113TUADITR-ND |
Manufacturer Part#: |
DDTA113TUA-7 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS PNP 200MW SOT323 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DDTA113TUA-7 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
30000 +: | $ 0.04823 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Base Part Number: | DDTA113 |
Supplier Device Package: | SOT-323 |
Package / Case: | SC-70, SOT-323 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
Series: | -- |
Resistor - Base (R1): | 1 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Discontinued at Digi-Key |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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DDTA113TUA-7, or DDTA113TUA7, is a Pre-Biased, Single Bipolar Junction Transistor (BJT). It is used in a variety of applications as an amplifier component and has a complex working principle.
DDTA113TUA-7 consists of three layers: emitter, base, and collector. The emitter is a heavily doped (n+-type) semiconductor with a positive terminal and a negative terminal. The base is a moderately doped (n–type) semiconductor with a positive terminal and a negative terminal. The collector is a lightly doped (p+-type) semiconductor with a positive terminal and a negative terminal. The three layers are connected in a specific way to form the entire transistor.
The working principle of DDTA113TUA-7 is based on the ability of the base and collector to create an electrical field. When current passes through the base, it creates an electric field that attracts electrons from the n-type material of the collector to the n-type material of the base. This causes a transfer of energy from the surrounding electrons to the n-type material of the base, which in turn causes an increase in the number of holes in the collector. These holes create an alternate pathway for electrons to flow in the circuit, resulting in an increase in the amount of current flowing in the circuit.
DDTA113TUA-7 is a general-purpose small-signal transistor used in audio-frequency amplifier circuits, switching circuits, analog amplifiers, and other such devices. It is well suited as a interfacing device between low-level and high-level circuits due to its low current consumption and low noise. It can also be used to transpose small amplitude signals and noise into higher voltage signals.
DDTA113TUA-7 also finds application in modulation/demodulation circuits, radio receivers, and television sets. It is used in AM radio sets to amplify the audio signal before it is fed to the speaker. In TV sets, it is used in the amplifier circuit to help the image signal reach the receiver. Furthermore, it is used in oscillators and different types of acoustic amplifiers.
In conclusion, DDTA113TUA-7 is a pre-biased, single bipolar junction transistor designed to amplify signals. It is used in a variety of applications, such as audio-frequency amplifiers, switching circuits, modulators, and radio and TV sets. Its working principle is based on the electrical field created between the base and collector, which causes an increase in the number of holes in the collector, resulting in an increased amount of current flowing in the circuit.
The specific data is subject to PDF, and the above content is for reference
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