DDTA143ZUA-7-F Allicdata Electronics
Allicdata Part #:

DDTA143ZUA-FDITR-ND

Manufacturer Part#:

DDTA143ZUA-7-F

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS PNP 200MW SOT323
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DDTA143ZUA-7-F datasheetDDTA143ZUA-7-F Datasheet/PDF
Quantity: 9000
1 +: $ 0.04000
10 +: $ 0.03880
100 +: $ 0.03800
1000 +: $ 0.03720
10000 +: $ 0.03600
Stock 9000Can Ship Immediately
$ 0.04
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Base Part Number: DDTA143
Supplier Device Package: SOT-323
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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DDTA143ZUA-7-F is a single, pre-biased bipolar junction transistor (BJT) application. A DDTA143ZUA-7-F is comprised of a base, emitter, and collector in a single, pre-biased package. This type of transistor has become increasingly popular in the fields of automotive and electronics due to its low cost, high reliability, and dependable performance.

The most common use of a DDTA143ZUA-7-F is as an amplifier. It is used to boost the output level of a signal. A DDTA143ZUA-7-F transistor can also be used for switching applications, such as in high current motor control or other control applications, as well as in voltage regulators. Other applications for this type of transistor include rectification, current sensing, and as a sensor amplifier or switch triggering.

The working principle of a DDTA143ZUA-7-F is based on the p-n-p junction. A p-n-p junction is formed when two n-type semiconductors and a p-type semiconductor join in a three-layer array. This junction acts as a diode in which current can only flow through it one way. When a voltage is applied to the emitter and base, current can flow from the emitter to the collector. This current flow is controlled by the voltage applied to the base.

The base-emitter junction is where most of the amplification occurs. This junction is the key to controlling the current flow between the emitter and collector. When the base voltage is increased above the emitter voltage, the current between the emitter and collector increases. This is known as forward biasing. Conversely, when the base voltage is decreased below the emitter voltage, the current between the emitter and collector decreases. This is known as reverse biasing.

The DDTA143ZUA-7-F also has a built-in base current protection feature. This feature prevents the transistor from being overstressed by an excessive current flow. Additionally, the DDTA143ZUA-7-F’s pre-biased package means it is already biased at the optimal position for the desired application prior to installation.

In summary, the DDTA143ZUA-7-F is a single, pre-biased bipolar junction transistor (BJT) application. It is commonly used as an amplifier, switching device, voltage regulator, and current sensing device. Its working principle is based on the pn-p junction, where a voltage applied to the emitter and base controls the current flow between the emitter and collector. In addition, it has a built-in base current protection feature to prevent overstress of the transistor. Therefore, the DDTA143ZUA-7-F is a dependable, reliable, and cost-effective choice for use in automotive, electronics, and other industries.

The specific data is subject to PDF, and the above content is for reference

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