DKI04035 Discrete Semiconductor Products |
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Allicdata Part #: | DKI04035TR-ND |
Manufacturer Part#: |
DKI04035 |
Price: | $ 0.30 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Sanken |
Short Description: | MOSFET N-CH 40V 48A TO-252 |
More Detail: | N-Channel 40V 48A (Tc) 61W (Tc) Surface Mount TO-2... |
DataSheet: | DKI04035 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.27821 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 61W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3910pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 63.2nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4 mOhm @ 51A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 48A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The DKI04035 is a single N-channel Insulated Gate Field Effect Transistor (IGFET). It is commonly used in switching, signal control and protection applications, and is well suited for a variety of digital and analogue signal processing applications.
The DKI04035 is fabricated using advanced power MOSFET technology. It is built from a high voltage, N-type MOSFET structure, which offers fast switching, low on-state resistance, and thermal robustness. In addition, the DKI04035 has built-in protection diodes for gate to source and gate to drain, allowing for high frequency applications.
The main purpose of the DKI04035 is to provide an efficient way of controlling power to electrical circuits. It works by using a gate control signal which is applied to the gate contact to open or close the channel between the source and drain terminals. When the gate is open, current can flow through the MOSFET; when it is closed, the MOSFET is off and current cannot pass through it.
The DKI04035 can also be used to amplify signals using the MOSFET’s transconductance capability. The transconductance of the DKI04035 is determined by the difference between the gate and drain voltages, as well as the amount of current flowing through the transistor. It can also be used to provide output current gain.
The DKI04035 is a versatile transistor that can be used in a variety of circuit designs. It is well suited for the switching, signal control and protection applications that it is designed for, as it offers fast switching times, low on-state resistance, and thermal robustness. In addition, the built-in protection diodes on the gate to source and gate to drain terminals give the DKI04035 a robust design and make it suitable for use in high frequency applications.
The DKI04035 is an ideal choice for any circuit designer who is looking for an efficient and reliable solution for their applications. The combination of fast switching, low on-state resistance, and robust protection diodes makes the DKI04035 a great choice for a variety of signal processing applications.
The specific data is subject to PDF, and the above content is for reference
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