DKI06108 Discrete Semiconductor Products |
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Allicdata Part #: | DKI06108TR-ND |
Manufacturer Part#: |
DKI06108 |
Price: | $ 0.23 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Sanken |
Short Description: | MOSFET N-CH 60V 47A TO-252 |
More Detail: | N-Channel 60V 47A (Tc) 47W (Tc) Surface Mount TO-2... |
DataSheet: | DKI06108 Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.21518 |
Vgs(th) (Max) @ Id: | 2.5V @ 650µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 47W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2520pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 38.6nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 9.1 mOhm @ 23.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 47A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DKI06108 is a vertical double-diffused MOSFET (VDMOS) that is designed for use in many high power applications including DC-DC converters, motor drives and power supplies. It is an integrated solution that combines the benefits of MOSFETs, such as high current and voltage capability, with the high efficiency and ease of operation of vertical diffused power transistors. The DKI06108 is specifically targeted at applications requiring high power handling and high frequency switching while maintaining a low on-resistance and high peak current capability.
The DKI06108 is a vertical double-diffused MOSFET (VDMOS) that features an extra wide N-channel and an extra wide P-channel in an integrated package. This integrated device reduces the number of components required in the circuit and provides a very high power handling capability. The unit offers an extremely low on-resistance and up to 200A of peak current rating, making it an ideal choice for high power applications. Additionally, the DKI06108 is equipped with an integrated over-current protection feature, which makes it suitable for use in noisy environments and with high frequencies.
In terms of applications, the DKI06108 is particularly well suited for use in DC to DC converters, power supply designs and motor drives. It can be used as a primary or secondary switch in the circuit. Its wide N-channel aids in the design of power stages, while its P-channel is especially well suited to gate drive applications. The integrated current protection feature ensures that the device is able to safely switch off when high current is being driven through the device and adds an extra level of protection to the application.
The working principle of the DKI06108 is based on a vertical double-diffused MOSFET. The device integrates two isolated N-channel and P-channel vertical MOSFETs in a single package. These devices are connected in drain-source configuration and are able to conduct current between the gate and source terminals. The MOSFETs provide a high peak current handle and low on-resistance, enabling high efficiency, low noise and high frequency switching. In addition, the integrated current protection device is triggered if the device is exposed to high current, protecting the circuit from damages caused by over-current.
In conclusion, the DKI06108 is a vertical double-diffused MOSFET that is ideal for high power handling and high frequency switching. It integrates two isolated N-channel and P-channel vertical MOSFETs in a single package, reducing the number of components needed in the circuit. In terms of applications, the DKI06108 can be used in DC-DC converters, motor drives and power supplies. Its integrated current protection feature ensures safe and reliable operation even in noisy environments.
The specific data is subject to PDF, and the above content is for reference
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