DKI06075 Allicdata Electronics

DKI06075 Discrete Semiconductor Products

Allicdata Part #:

DKI06075TR-ND

Manufacturer Part#:

DKI06075

Price: $ 0.30
Product Category:

Discrete Semiconductor Products

Manufacturer: Sanken
Short Description: MOSFET N-CH 60V 48A TO-252
More Detail: N-Channel 60V 48A (Tc) 61W (Tc) Surface Mount TO-2...
DataSheet: DKI06075 datasheetDKI06075 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.27821
Stock 1000Can Ship Immediately
$ 0.3
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 61W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3810pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 53.6nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 34A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DKI06075 is a single-field-effect transistor (FET) which is naturally capable of controlling large amounts of power. This power control FET can be used in a variety of applications, including audio amplifiers, telephone interfaces, and medical devices.

One of the most important features of the DKI06075 is its very high power handling capability, which is almost double that of most common MOSFETs. This makes the DKI06075 an ideal choice for applications that require efficient power transfer. As such, this FET can be used in power conversion and switching applications such as DC/AC inverters or large-scale power converters for transportation, commercial or industrial needs. Additionally, the DKI06075 can also be used for various audio applications by providing a high input drive current for low-voltage audio amplifiers.

The DKI06075 is composed of a silicon gate structure which makes it an ideal choice for operating temperatures up to 250°C - far more than many other FETs. Its low gate resistance and low gate charge make it an excellent device for very low voltage and high current switching operations. It has a typical threshold voltage of 4 Volts, and can withstand a drain-source voltage up to 50 Volts. It also has a maximum drain-source current rating of 2.5A.

The working principle for the DKI06075 is quite simple. A voltage is applied to the gate terminal, which in turn creates an electrical field between the channel and the gate. When the channel is at a higher voltage than gate, the current is let through and current can flow from the drain to the source. When the gate is at a higher voltage than the channel, the current is blocked, and no current can pass through.

The DKI06075 is a highly reliable power control switch with excellent performance at high power levels and high temperatures. Its low values of gate charge and gate resistance make it ideal for a variety of limited-power applications. With its high current handling capacity, this FET can be used in many applications, as it is able to efficiently control large amount of power.

The specific data is subject to PDF, and the above content is for reference

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