DN2450K4-G Discrete Semiconductor Products |
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| Allicdata Part #: | DN2450K4-GTR-ND |
| Manufacturer Part#: |
DN2450K4-G |
| Price: | $ 0.34 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microchip Technology |
| Short Description: | MOSFET N-CH 500V 350MA 3DPAK |
| More Detail: | N-Channel 500V 350mA (Tj) 2.5W (Ta) Surface Mount ... |
| DataSheet: |  DN2450K4-G Datasheet/PDF |
| Quantity: | 1000 |
| 2000 +: | $ 0.30888 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 500V |
| Current - Continuous Drain (Id) @ 25°C: | 350mA (Tj) |
| Drive Voltage (Max Rds On, Min Rds On): | 0V |
| Rds On (Max) @ Id, Vgs: | 10 Ohm @ 300mA, 0V |
| Vgs(th) (Max) @ Id: | -- |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 200pF @ 25V |
| FET Feature: | Depletion Mode |
| Power Dissipation (Max): | 2.5W (Ta) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | TO-252, (D-Pak) |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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DN2450K4-G is a new type of power MOSFETs, or metal–oxide–semiconductor field-effect transistor (MOSFET). The device is a type of FET, with enhanced voltage and current handling capabilities.
The DN2450K4-G has high breakdown voltage and low on-state resistance. It also has fast switching speed and low gate charge. This MOSFET is designed to be used in a variety of applications, including but not limited to high voltage power control, motor control and driving, and industrial and consumer power control.
The structure of the DN2450K4-G power MOSFET consists of a source gate and a drain gate. The source gate is the positive terminal, which is connected to the source of the external circuit. The drain gate is the negative terminal, which is connected to the drain of the external circuit. The source and drain gates can be biased with a voltage that is higher than the MOSFET\'s breakdown voltage, so that it will be able to provide switching and conduction capability.
The working principle of the DN2450K4-G is based on the capacitive coupling between the source gate and the drain gate. When a voltage is applied to the source gate, it creates an electric field, which is then pulled by the gate oxide layer of the drain gate, thus creating a capacitive coupling between them. This capacitive coupling will cause a current to flow through the external circuit, which can then be used to control a motor or other device.
The DN2450K4-G MOSFET is a very efficient and cost-effective solution for power control in a variety of applications. Its fast switching speed and low gate charge help to reduce system power consumption, while its high breakdown voltage and low on-state resistance make it suitable for high-voltage applications. The device is simple to use and easy to configure, and it is compatible with a wide range of devices.
The specific data is subject to PDF, and the above content is for reference
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