DN2450N8-G Discrete Semiconductor Products

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A DN2450N8-G is a single field-effect transistor (FET) designed to drive heavy loads. It offers a low on-resistance (RDSon) and gate charge that helps reduce switching losses, making it ideal for high-speed switching applications.

Overview

The DN2450N8-G is a single n-channel FET with a low Ron of 0.75 ohms. It features an extremely low gate charge (Qg) of 1.7 nC and a maximum power dissipation of 8.3 watts. It has a breakdown voltage (BVdss) of 50V, as well as a lower 10V threshold/gate voltage (Vgs) that helps reduce switching losses. It also features a low input (Qin) capacitance of 20 pF, which helps improve performance in high-speed switching applications.

Applications

The DN2450N8-G is designed for applications such as motor control, switch-mode power supplies, and power conversion applications where high efficiency, high power density, and low EMI (electromagnetic interference) are key factors. It is also suitable for LED lighting applications and other power control applications.

Working Principle

The DN2450N8-G works by creating a cross-sectional area between two metal plates, called a depletion layer. This allows the drain, source and gate connections to control the flow of electrons between them. When a voltage is applied, the electrons move through the depletion layer, changing the conductivity of the channel. Depending on the voltage applied, the number of electrons that can pass through the channel can be increased or decreased. The larger the voltage applied, the greater the number of electrons that can pass through the channel.

The DN2450N8-G is a unipolar device, meaning that its current flow can only be in one direction. The gate connection is used to switch between on and off states, thus allowing the transistor to double as a switch. When the gate voltage is high enough, current starts to flow through the channel and the FET is turned on. When the gate voltage is reduced below a certain level, the current flow is stopped, thus turning off the FET.

Advantages

The DN2450N8-G offers several advantages over other FETs. It has a low on-resistance (RDSon) and gate charge (Qg) that help reduce switching losses, making it ideal for high-speed switching applications. It also has a low input (Qin) capacitance, which helps to reduce distortion and enhance performance in high-speed switching applications. Another benefit of the DN2450N8-G is that it is relatively immune to EMI, which helps reduce interference and noise in sensitive applications.

The DN2450N8-G is a reliable and versatile single FET that is suitable for a range of applications, from high-speed switching in motor control and power conversion, to LED lighting and other power control applications.

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