DN2470K4-G Discrete Semiconductor Products

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The DN2470K4-G is a single N-channel MOSFET Transistor with high current density, used for various applications. It is a versatile device featuring an insulated gate, which can be used in a variety of applications. The DN2470K4-G provides excellent current handling capacity and offers recent advancements in high voltage MOSFET technology. This device is suitable for use in many different applications, including inverters, high-efficiency power supplies and motor drives.

The DN2470K4-G single N-channel MOSFET operates with a typical breakdown voltage of 24V and a maximum drain-source voltage of 42V. It is also capable of handling a maximum drain current of 24A and a maximum gate threshold voltage of 4V. The device is constructed from a special quality silicon wafer and utilizes advanced packaging technology to ensure maximum performance and reliability.

The DN2470K4-G single N-channel MOSFET Transistor is an ideal choice for a wide range of applications. It is suitable for use in power management, automotive and industrial applications. Its low on-resistance provides excellent power efficiency for inverters, high-efficiency power supplies and motor drives. Furthermore, it also offers excellent thermal stability and is capable of withstanding extreme environmental conditions.

The working principle of the DN2470K4-G single N-channel MOSFET Transistor involves the movement of electrons or holes in and out of the channel formed by the Gate, called the Depletion Region. When the Gate voltage is increased, the Depletion Region narrows and the MOSFET operates in the saturation region. By varying the Gate voltage, the DOPING LEVEL of the channel can be adjusted, thus allowing for precise control of the output in AC and high-frequency applications. This is why the DN2470K4-G is a popular choice for high-speed switching applications.

The DN2470K4-G single N-channel MOSFET Transistor is an extremely versatile device, capable of operating in any environment. It is also very robust and capable of withstanding extreme temperatures. Additionally, it features a maximum drain-source breakdown voltage of 42V, making it suitable for use in high-voltage applications. The device is also designed to be tolerant to ESD and has excellent static characteristics.

The DN2470K4-G single N-channel MOSFET Transistor is an excellent choice for a wide range of applications ranging from automotive, consumer electronics and industrial applications. Its low on-resistance, low gate drive requirements, high breakdown voltage and low RDS (on) make it extremely suitable for use in high-speed switching applications, such as motor drives and inverters. Furthermore, it also offers excellent thermal stability, allowing it to withstand the test of time.

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