DRC2113Z0L Discrete Semiconductor Products

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The DRC2113Z0L is a single, pre-biased, bipolar junction transistor (BJT) device that is commonly used on switching applications and systems with load current and voltage demands. The device is a NPN type and has a maximum power rating of 0.8W at 85°C, making it ideal for applications where a low-elevation temperature is required. The DRC2113Z0L features an internal temperature compensated base-emitter junction and an excellent gain of unity current and S/N ratio.

The device\'s silicon epitaxial planar collector structure and PNP transistor process offer superior second breakdown voltage immunity. The device also has low temperature coefficients and has been optimized to provide a very fast turn-on time. With a low saturation voltage, the device also has excellent thermal performance and far greater robustness than other similar devices on the market.

The DRC2113Z0L can be used in a wide range of applications including power switches and automotive devices. Its low saturation voltage, fast turn-on time, and low-power consumption make it ideal for applications where a large number of small-signal conversions are required. The device also provides superior enhancement and I/O protection to ensure that switching operations are safe and reliable.

Additionally, the DRC2113Z0L has an internal two-stage voltage suppression diode which provides both forward- and reverse-bias protection, minimizing any external impedance problems. The device also offers thermal shutdown protection to prevent external device overheating.

The DRC2113Z0L is a highly versatile and effective device for switching applications. It utilizes the Hall Effect principle to make switching operations more efficient by providing a higher degree of accuracy when making signal transitions. The device also provides stable switching performance at operating temperatures as low as -55°C. This allows the device to operate in wide range of temperature conditions, making it ideal for applications in harsh environments.

The DRC2113Z0L features excellent gain control over the signal transition. This allows for the device to more precisely control the switching rate and reduce capacitive transient currents. This enhances the device\'s performance and extends its overall lifetime. The device also features an internal ESD diode which helps to protect the device from static electricity.

In summary, the DRC2113Z0L is a pre-biased, bipolar junction transistor device that is commonly used for various switching applications. This device offers superior thermal performance and excellent gain control to ensure more precise operation. The DRC2113Z0L also offers protection against ESD and has an internal temperature protected base-emitter junction. This makes the device the ideal choice for any application where a low-elevation temperature is required.

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