DRC2523Y0L Discrete Semiconductor Products |
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Allicdata Part #: | DRC2523Y0LTR-ND |
Manufacturer Part#: |
DRC2523Y0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 200MW MINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DRC2523Y0L Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 100mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 1µA |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | Mini3-G3-B |
Base Part Number: | DRC2523 |
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The DRC2523Y0L is a type of single, pre-biased NPN bipolar junction transistor (BJT). It is a three-terminal device with an emitter, base, and collector electrode. It is mostly used for medium-power switching applications, such as a power transistor for motor control, relay control, and solid state lighting. Furthermore, this device is also capable of being used in audio amplification and other low-frequency applications.
This device features a high current gain of 250 and a maximum of 100 Watts of power dissipation. Additionally, it has a high maximum collector current of 5.0 Amps and a maximum collector-emitter voltage of 80 Volts. Furthermore, it is rated to operate at temperatures up to 150ºC in the junction. It also has a maximum reverse collector-base breakdown open-circuit voltage of 800 Volts.
The DRC2523Y0L is well known for its ability to operate with low noise levels and low on-state and off-state power losses. This is due to its high Ratings to Ambient (RTA) thermal coefficient, which keeps the device running cooler than comparable alternatives. Additionally, its switching time is also faster than comparable transistors due to its fast rising and falling edges.
The working principle of a bipolar junction transistor is based on two main effects: the first is the forward bias of the base-emitter junction which allows current to flow from the emitter to base, and the second is the reverse bias of the base-collector junction which restricts current to flow from collector to base. These two effects, when combined, create a pair of diodes that allow current to flow from emitter to collector, producing a gain effect as the current passes through.This is the basic mechanism that allows a transistor to be used as an amplifier.
The DRC2523Y0L can be used in many applications, the most common of which are in digital circuits, audio amplifiers and switching power supplies, with a wide variety of applications in other areas such as automotive, aerospace, and health care technology. Because of the particular specs of this transistor, it offers improved heat dissipation and fast switching times. This allows it to be used in systems with high efficiency, reliability, and low power consumption.
In sum, the DRC2523Y0L is a single, pre-biased NPN bipolar junction transistor. It is best used in medium-power switching applications for motor control, relay control, and solid state lighting. Additionally, it offers high current gain, high maximum collector current, high maximum collector-emitter voltage, a maximum reverse collector-base breakdown open-circuit voltage and fast switching edges. This device is used in many applications across multiple industries and offers high efficiency and low power consumption.
The specific data is subject to PDF, and the above content is for reference
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