DRC2143Y0L Discrete Semiconductor Products

Resistor - Emitter Base (R2):	22 kOhms
Base Part Number:	DRC2143
Supplier Device Package:	Mini3-G3-B
Package / Case:	TO-236-3, SC-59, SOT-23-3
Mounting Type:	Surface Mount
Power - Max:	200mW
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	250mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 5mA, 10V
Series:	--
Resistor - Base (R1):	4.7 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	NPN - Pre-Biased
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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The DRC2143Y0L is a single Pre-Biased, Bipolar Junction Transistor (BJT) that is capable of providing various switching or amplification functions. It is commonly used in automotive, industrial, and consumer electronic applications. This device features a very robust construction, making it well-suited for voltage and current levels up to 70V, 1A at 85°C.The DRC2143Y0L is an n-channel BJT with a single pre-biased, SiGe base. It offers low loss, fast switching speed, and impressive dielectric strength. The device is constructed of a monolithic body with semiconductor layers, meaning it does not require an external gate for triggering and switching. This allows for a simple, yet effective design and eliminates additional components that would be needed if an additional gate was required. The DRC2143Y0L can be used to power and control a wide variety of electronic devices, such as motors, solenoids, lamps, and other automotive and industrial loads. It is also capable of amplifying signals, such as audio, video, or data communications. As it is designed to operate with both alternating and direct current, it can be used in various vehicles or household appliances. The DRC2143Y0L works by allowing the base current to control the potential difference between the collector and the emitter. The influence of base current onto the transistor generates an active channel, and this channel causes the electron flow from the collector to the emitter. The DRC2143Y0L features a Schottky diode, which acts as a protection device. It is often used to provide reverse-bias protection against the collector and emitter. This device functions by redirecting reverse-biased current to a low-impedance path, thereby limiting the current flow and protecting the transistor. As such, it is important to consider this feature when selecting a device for a particular application. In addition to its various applications, the DRC2143Y0L offers superior performance levels. It features a low threshold voltage and on-off ratios, meaning it is capable of operating with very low drive currents. It also has an absolute maximum peak collector current of 1A and a breakdown voltage of 70V at 85°C. With its wide range of characteristics and superior performance, the DRC2143Y0L is a great choice for a variety of projects and applications.

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