DRC2614T0L

Resistor - Base (R1):	10 kOhms
Base Part Number:	DRC2614
Supplier Device Package:	Mini3-G3-B
Package / Case:	TO-236-3, SC-59, SOT-23-3
Mounting Type:	Surface Mount
Power - Max:	200mW
Current - Collector Cutoff (Max):	1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic:	80mV @ 2.5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 50mA, 5V
Series:	--
Voltage - Collector Emitter Breakdown (Max):	20V
Current - Collector (Ic) (Max):	600mA
Transistor Type:	NPN - Pre-Biased
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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The DRC2614T0L is a commonly used single pre-biased bipolar junction transistor (BJT) today. It is composed of three layers of semiconductor materials, each with its own respective bipolar characteristics. It is typically used in applications such as switch logic circuits, amplifier circuits, and in many industrial and business installations. The DRC2614T0L is known for its low-cost solution to control electrical power with a variety of performance levels. It is one of the most versatile and practical transistor products on the market due to its exceptional performance in low-power applications and relatively high current capability. Additionally, it has an integrated protection structure that guards against damage caused by short circuits and high current spikes. The DRC2614T0L is a three-terminal device, with the three terminals being the base, collector, and emitter. To best understand the working principle of the DRC2614T0L, one must first consider how it operates in the context of its physical structure. The base is the critical point of control for electrical power in a NPN BJT. The base is connected to a control voltage, which increases or deceases the number of electrons in the collector region. If a positive voltage is applied to the base, the electrons in the collector region become more positive, and new electrons are generated in the emitter region via the diffusion process of electrons. This is known as forward biasing, and it is the basis of PNP and current gain in transistors.On the other hand, when a negative voltage is applied to the base, the electrons in the collector region become more negative and the number of electrons in the emitter region decreases. This is known as reverse biasing and is the basis of NPN transistor logical operations. The base-collector junction is reverse biased while the base-emitter junction is forward biased. Since the base terminal is connected to a control voltage source, an electric field develops that attracts the electrons from the collector to the emitter region and as a result, allows current to flow from the collector to the emitter. This current flow can be controlled by varying the base current. The DRC2614T0L is a popular transistor due to its low-cost solution and its ability to handle heavy electrical current. In addition to its wide application field, it has outstanding transistor performance with a high amount of current gain and is extremely reliable in low-power applications. Its integrated protection structure guards against damage that might be caused by sudden current spikes, making it one of the most stable and reliable transistors on the market.

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