Allicdata Part #: | DRC2115E0LTR-ND |
Manufacturer Part#: |
DRC2115E0L |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 200MW MINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DRC2115E0L Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3000 +: | $ 0.04578 |
6000 +: | $ 0.04120 |
15000 +: | $ 0.03662 |
30000 +: | $ 0.03434 |
75000 +: | $ 0.03052 |
Resistor - Emitter Base (R2): | 100 kOhms |
Base Part Number: | DRC2115 |
Supplier Device Package: | Mini3-G3-B |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Series: | -- |
Resistor - Base (R1): | 100 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The DRC2115E0L is a single, pre-biased, bipolar junction transistor (BJT). It is designed to provide superior performance and high efficiency in a wide variety of applications. It is suitable for a wide range of switching and amplifying applications. This transistor has excellent temperature stability, low input capacitance, and fast switching speeds.
The DRC2115E0L is a single, pre-biased, NPN BJT. It has a collector-to-base breakdown voltage of 35V and a collector-to-emitter breakdown voltage of 30V. It has a maximum collector current of 1A and a maximum power dissipation of 125mW. The transistor has a collector-to-emitter saturation voltage of 0.4V and a base-to-emitter saturation voltage of 0.7V. The device is rated to operate over a temperature range of –55°C to +125°C. It is housed in a low profile 2-pin porcelain package.
The principal function of the BJT is to switch or amplify electrical signals. It is made up of three layers of semiconductor material, base, collector, and emitter. When a voltage is applied to the base, a current passes through the base-collector junction, creating an electron flow into the collector. This current flow can be changed by changing the amount of voltage applied to the base. This current flow is amplified when it reaches the emitter, creating an amplified current or voltage.
The DRC2115E0L is well suited for use as a switching device in industrial, automotive and power control applications. It is used in power supplies, inverters and motor control circuits. In automotive applications, it is used for lamp switching and ignition control. It is also used in audio amplifiers and as a current amplifier.
The DRC2115E0L is a reliable high-speed device. It has a fast switching speed, low power dissipation, high surge capability and wide temperature range. It is widely used in applications where a reliable and high speed BJT is required.
The DRC2115E0L offers superior performance in applications requiring high power density, high efficiency and high switching speed. It is widely used in power supplies, inverters, motor control circuits and automotive lamp switching applications. This device is an excellent choice for high-speed switching applications, such as in audio amplifiers and current amplifiers. It provides excellent performance and high efficiency in all types of applications.
The specific data is subject to PDF, and the above content is for reference
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