DRC2523E0L Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	2.2 kOhms
Resistor - Emitter Base (R2):	2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 100mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 5mA, 100mA
Current - Collector Cutoff (Max):	1µA
Power - Max:	200mW
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	Mini3-G3-B
Base Part Number:	DRC2523

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The DRC2523E0L is a transistor specifically designed for pre-biased applications. This transistor is a single bipolar junction transistor (BJT), which means that it is composed of two p-n junctions connected to a common circuit or substrate. The DRC2523E0L is designed to be used where a low-noise, high temperature and low-distortion RF circuit design is required.The most important feature of the DRC2523E0L is its ability to operate in pre-biased mode. This means that the bias voltage is applied to the transistor before it is turned on, allowing it to be easily operated in the presence of a large external current or a low power supply without significant distortion. Pre-biasing also reduces noise generated in the device and increases its thermal stability, making it suitable for radio frequency (RF) applications.The DRC2523E0L is a three-terminal device, with a base, collector and emitter. The base is the controls the current that flows from the collector to the emitter of the device. The current gain of the DRC2523E0L is typically greater than 100 at a collector-base voltage of 0.7V. This high current gain makes the DRC2523E0L highly effective for RF applications where the bias voltage needs to be well-controlled.The DRC2523E0L has a low-noise figure of 0.13dB, making it ideal for use in RF applications where a high degree of accuracy is required. Its high frequency response allows the transistor to operate up to 2GHz, making it suitable for use in communications applications. In addition, the device has a low distortion of 0.05%, making it ideal for use in audio applications.The DRC2523E0L is designed to operate at a collector-emitter voltage of up to 7V and can handle collector currents of up to 50mA. This means that the device can easily handle high-frequency applications without significant distortion. The device also has an excellent thermal stability, allowing it to operate reliably at temperatures up to 150°C.The DRC2523E0L is an ideal solution for applications where a low-noise, high temperature and low-distortion RF circuit design is required. Its pre-biasing capability allows the device to be used in the presence of a large external current or a low power supply without significant distortion. The device also has a high current gain, making it ideal for radio frequency applications. The excellent thermal stability of the device allows it to be used over a wide temperature range, making it suitable for use in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description