Allicdata Part #: | DRC2543E0LTR-ND |
Manufacturer Part#: |
DRC2543E0L |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 200MW MINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DRC2543E0L Datasheet/PDF |
Quantity: | 3000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3000 +: | $ 0.09905 |
6000 +: | $ 0.09265 |
15000 +: | $ 0.08627 |
30000 +: | $ 0.08520 |
Specifications
Resistor - Emitter Base (R2): | 4.7 kOhms |
Base Part Number: | DRC2543 |
Supplier Device Package: | Mini3-G3-B |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Current - Collector Cutoff (Max): | 1µA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 5mA, 100mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 100mA, 10V |
Series: | -- |
Resistor - Base (R1): | 4.7 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 500mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
**DRC2543E0L Application Field and Working Principle**Bipolar (BJT) transistors, also known as Bipolar Junction Transistors, are one of the most commonly used types of transistors available. DRC2543E0L is one such type of pre-biased single BJT transistor.The DRC2543E0L is a NPN-type bipolar junction transistor, manufactured in a surface mount SOT-23 package. It is typically used as an amplifier in various consumer electronics applications and power supply circuits, and it can also be used as a switching element in a wide range of electronic applications.A BJT is an electronic component that is able to control the flow of electrical current between two terminals. It is constructed from three layers of semiconductor material, with each layer containing one type of semiconductor. The two outer layers are usually made from the same type of semiconductor material, such as N-type or P-type, and the middle layer is constructed from alternating layers of one type and the other. These two semiconductor layers are referred to as ‘base’ and ‘collector’, and the middle layer as the ‘emitter’.When a small electrical current is applied to the base, it generates an electric field across the device, which in turn results in a flow of electrons from the base to the collector. This creates an even larger current flow through the transistor\'s conduction channel, which can then be used to control the current flow between the two terminals.BJTs are able to amplify electrical signals due to the fact that the current flowing through the collector can be much larger than the current flowing into the base. This means that even a small input signal can cause a large output amplifier reaction.The DRC2543E0L typically has a voltage rating of 12V, and its collector-emitter (CE) saturation voltage is typically between 0.05 to 0.25V. It has a maximum power dissipation of 350mW, and a maximum current rating of 250mA. The device is usually triggered with its base voltage, which will allow an easy current on/off control.The DRC2543E0L is designed for use in low-frequency applications, such as AF amplifiers, frequency converters, and power supplies. It is also often found in audio amplifiers as a driver for loudspeakers.In summary, DRC2543E0L is a pre-biased single BJT transistor that is widely used in consumer electronics applications and power supplies because of its ability to control the current flow through the device and amplify small input signals. It is usually triggered with a small base voltage and has a maximum current rating of 250mA.The specific data is subject to PDF, and the above content is for reference
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