DRC2115G0L Allicdata Electronics

DRC2115G0L Discrete Semiconductor Products

Allicdata Part #:

DRC2115G0LTR-ND

Manufacturer Part#:

DRC2115G0L

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS NPN 200MW MINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DRC2115G0L datasheetDRC2115G0L Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.04578
6000 +: $ 0.04120
15000 +: $ 0.03662
30000 +: $ 0.03434
75000 +: $ 0.03052
Stock 1000Can Ship Immediately
$ 0.05
Specifications
Resistor - Emitter Base (R2): 100 kOhms
Base Part Number: DRC2115
Supplier Device Package: Mini3-G3-B
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 200mW
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Series: --
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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DRC2115G0L application field and working principle

The DRC2115G0L is an NPN silicon surface mount transistor classed as a pre-biased single under the transistors - bipolar (BJT) category. It is designed to be used in a wide range of applications from low to mid power switches and drivers to amplifiers and other signal conditioning circuits.

Construction

The heart of the DRC2115G0L is the NPN silicon transistor which consists of two emitter-base regions separated by a narrow collector region. The emitter-base regions are protected by a very thin oxide layer. This structure is referred to as a “triple diffused” transistor. The collector, emitter and base terminals are heavily doped and are mounted onto a special glass-passivated NPN substrate. The internal circuitry of the DRC2115G0L includes two back-to-back zener diodes for efficient power switching and current conduction.

Working principle

The working principle of the DRC2115G0L is based on the function of an NPN transistor. A DC input signal is applied to the base terminal of the transistor which effectively controls the current flow between the collector and the emitter. The input signal is known as the base voltage and can be used to modulate the output current Ie. When the base voltage increases, the output current will also increase and vice versa. When the DRC2115G0L is connected in a power switching circuit, the output current is used to control the power switching.

Applications

The DRC2115G0L is a versatile surface mount transistor and can be used in a variety of applications. It is suitable for use in applications such as low- to mid-power switches, amplifiers, signal conditioning circuits and other circuits requiring moderate power. It can also be used in opto-isolators, memory modules and power supplies. The device is particularly suitable for circuits where fast switching speeds, low power losses and high output current ratings are needed.

Conclusion

The DRC2115G0L is a versatile pre-biased NPN silicon transistor designed for use in a wide range of applications. Its versatile construction is advantageous for many types of applications, offering reliable operating performance. As such, it is a suitable choice for those requiring a fast switching, low power loss, high output current surface mount transistor.

The specific data is subject to PDF, and the above content is for reference

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