Allicdata Part #: | DTC114EKA-TP-ND |
Manufacturer Part#: |
DTC114EKA-TP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | TRANS PREBIAS NPN 200MW SOT23-3L |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DTC114EKA-TP Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 5V |
Base Part Number: | DTC114E |
Supplier Device Package: | SOT-23-3L |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 10 kOhms |
Resistor - Base (R1): | 10 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The DTC114EKA-TP is a pre-biased, single bipolar junction transistor (BJT). It is a three-terminal electronic semiconductor device with small packages and high efficiency ratings that makes it ideal for a variety of applications. It has an intrinsically directional current flow and low power dissipation, allowing for low power consumption and energy savings.
Application Field:
This type of device is commonly used in power amplifiers, switches, level translators, digital logic buffers, and other similar applications. Its use in communication, industrial, and automotive industries is quite widespread. The BJT is also used in voltage regulators, such as adjustable and switched mode power supplies.
In addition, these transistors are a popular choice in digital logic circuits, microprocessors and memory chips. They can be found in data converters, analog-to-digital converters and frequency synthesizers. This makes it an ideal device for the application of various communication systems.
The pre-biased DTC114EKA-TP is also useful in designing amplifiers for mobile and cordless phone base stations. For example, this device can be used for gain enhancement in preamplifiers and as a main gain parameter for power amplifiers. It is also frequently incorporated into automotive electronics for current amplifying or switching applications.
Working Principle:
The DTC114EKA-TP is a current-controlled device that has three connections – the collector, emitter and base. The base terminal connects the emitter and collector terminals to the external circuit and provides an input to the transistor. As the current between the emitter and base terminals increases, the current between the emitter and collector terminals increases. This makes the BJT an amplifying device since the output current is much larger than the input current.
The transistor has two main states of operation - cut-off and saturation. In the cut-off state, the input current is not large enough to switch on the collector - emitter current flow, and the transistor is non-conductive. In the saturation state, the input current is large enough to turn the transistor on and cause it to conduct. This state allows for current amplification and voltage regulation.
The pre-biased DTC114EKA-TP device is designed to be used in applications where it is subject to relatively large changes in temperature and current. It has a higher voltage drop than other kinds of BJTs and has reverse breakdown protection. This makes it more suitable for use in applications involving high currents and inductive loads.
The DTC114EKA-TP single bipolar junction transistor is a highly efficient and reliable device for many applications. It is a perfect choice for current amplification, voltage regulation, and switching in communication, industrial, and automotive electronic systems.
The specific data is subject to PDF, and the above content is for reference
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